2ED21824S06JXUMA1

Infineon Technologies
726-2ED21824S06JXUMA
2ED21824S06JXUMA1

Fabricante:

Descripción:
Controladores de puertas LEVEL SHIFT DRIVER

Hoja de datos:
Modelo ECAD:
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En existencias: 3,100

Existencias:
3,100 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
5 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
$-.--
Precio ext.:
$-.--
Est. Tarifa:
Empaque:
Envase tipo carrete completo (pedir en múltiplos de 2500)

Precio (USD)

Cantidad Precio unitario
Precio ext.
Cinta cortada / MouseReel™ †
$2.19 $2.19
$1.62 $16.20
$1.48 $37.00
$1.32 $132.00
$1.25 $312.50
$1.22 $610.00
Envase tipo carrete completo (pedir en múltiplos de 2500)
$1.22 $3,050.00
$1.09 $5,450.00
† $7.00 Se agregará y calculará la tarifa de MouseReel™ en su carrito de compras. Ningún artículo de MouseReel™ se puede cancelar ni devolver. ↩

Atributo del producto Valor de atributo Seleccionar atributo
Infineon
Categoría de producto: Controladores de puertas
RoHS:  
IGBT, MOSFET Gate Drivers
Half-Bridge
SMD/SMT
DSO-14
1 Driver
1 Output
2.5 A
10 V
20 V
15 ns
15 ns
- 40 C
+ 125 C
Reel
Cut Tape
MouseReel
Marca: Infineon Technologies
País de ensamblaje: Not Available
País de difusión: Not Available
País de origen: MY
Tipo lógico: CMOS, LSTTL
Tiempo de retardo de apagado máximo: 300 ns
Tiempo de retardo de encendido máximo: 300 ns
Sensibles a la humedad: Yes
Corriente de suministro operativa: 550 uA
Dp - Disipación de potencia : 1 W
Tipo de producto: Gate Drivers
Retraso de propagación - Máx.: 300 ns
Apagado: Shutdown
Cantidad de empaque de fábrica: 2500
Subcategoría: PMIC - Power Management ICs
Tecnología: Si
Alias de las piezas n.º: 2ED21824S06J SP003244528
Peso de la unidad: 138.510 mg
Productos encontrados:
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Atributos seleccionados: 0

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Models

Product Catalogs

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CNHTS:
8542399000
USHTS:
8542310075
ECCN:
EAR99

2ED218x High-Current 650V Half-Bridge Gate Drivers

Infineon Technologies 2ED218x High-Current 650V Half-Bridge Gate Drivers feature silicon-on-insulator (SOI) technology and an integrated bootstrap diode (BSD) in a DSO-8 or DSO-14 package. The series combines high current with high speed to drive MOSFETs and IGBTs with typical 2.5A sink and source current. The high-voltage, level-shift SOI technology provides robustness to protect against negative transient voltage spikes and lowers level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits. Infineon Technologies 2ED218x High-Current 650V Half-Bridge Gate Drivers offer ruggedness and noise immunity against negative transient voltages on the VS pin.

Small Home Appliance Solutions

Infineon Small Home Appliance Solutions features a portfolio of products that fit into small home appliance applications. There is a growing trend for style and more efficiency, which designers are addressing with countless variations. Energy-efficient, modern-looking, wipe-clean, and hermetically sealed surfaces are only a few characteristics that a design engineer has to consider and incorporate into new designs. Infineon delivers solutions for several key areas, such as induction heating, as well as appliances that require motor control solutions with energy-efficient, integrated power devices.

2ED210x Low-Current 650V Half-Bridge Gate Drivers

Infineon Technologies 2ED210x Low-Current 650V Half-Bridge Gate Drivers offer an integrated bootstrap diode (BSD) and silicon-on-insulator (SOI) technology in a DSO-8 or DSO-14 package. The high-voltage, level-shift SOI technology in these 0.7A drivers provides robustness against negative transient voltage spikes and lowers level-shift power losses to minimize device-switching power dissipation. The advanced process enables monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits. Infineon Technologies 2ED210x Low-Current 650V Half-Bridge Gate Drivers feature excellent ruggedness and noise immunity against negative transient voltages on the VS pin.

Silicon-on-Insulator (SOI) Gate Driver ICs

Infineon Silicon-on-Insulator (SOI) Gate Driver ICs are level-shift high voltage gate driver ICs for IGBTs and MOSFETs. The SOI technology is a high-voltage, level-shift technology providing unique, measurable, and best-in-class advantages. These include integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that are causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

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