IXFT150N25X3HV

IXYS
747-IXFT150N25X3HV
IXFT150N25X3HV

Fabricante:

Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO268 250V 150A N-CH X3CLASS

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En existencias: 300

Existencias:
300 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
27 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Las cantidades superiores a 300 estarán sujetas a requisitos mínimos de pedido.
Mínimo: 1   Múltiples: 1
Precio unitario:
$-.--
Precio ext.:
$-.--
Est. Tarifa:

Precio (USD)

Cantidad Precio unitario
Precio ext.
$27.27 $27.27
$19.15 $191.50

Atributo del producto Valor de atributo Seleccionar atributo
IXYS
Categoría de producto: Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
RoHS:  
Si
SMD/SMT
D3PAK-3 (TO-268-3)
N-Channel
1 Channel
250 V
150 A
9 mOhms
- 10 V, 10 V
2.5 V
154 nC
- 55 C
+ 150 C
735 W
Enhancement
HiPerFET
Tube
Marca: IXYS
Configuración: Single
País de ensamblaje: Not Available
País de difusión: Not Available
País de origen: KR
Tiempo de caída: 10 ns
Transconductancia hacia delante - Mín.: 60 S
Sensibles a la humedad: Yes
Tipo de producto: MOSFETs
Tiempo de subida: 30 ns
Cantidad de empaque de fábrica: 30
Subcategoría: Transistors
Tipo de transistor: 1 N-Channel
Tiempo de retardo de apagado típico: 115 ns
Tiempo típico de demora de encendido: 30 ns
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Atributos seleccionados: 0

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PCN

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CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

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IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).

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