IXTH20N65X2

IXYS
747-IXTH20N65X2
IXTH20N65X2

Fabricante:

Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO247 650V 20A N-CH X3CLASS

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Disponibilidad

Existencias:
No en existencias
Plazo de entrega de fábrica:
41 Semanas Tiempo estimado de producción de fábrica.
Se establece un tiempo de entrega prolongado para este producto.
Mínimo: 300   Múltiples: 30
Precio unitario:
$-.--
Precio ext.:
$-.--
Est. Tarifa:

Precio (USD)

Cantidad Precio unitario
Precio ext.
$3.68 $1,104.00
$3.65 $1,861.50

Atributo del producto Valor de atributo Seleccionar atributo
IXYS
Categoría de producto: Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
20 A
185 mOhms
- 30 V, 30 V
2.5 V
27 nC
- 55 C
+ 150 C
290 W
Enhancement
HiPerFET
Tube
Marca: IXYS
Configuración: Single
País de ensamblaje: Not Available
País de difusión: Not Available
País de origen: KR
Tiempo de caída: 20 ns
Transconductancia hacia delante - Mín.: 11 S
Tipo de producto: MOSFETs
Tiempo de subida: 27 ns
Cantidad de empaque de fábrica: 30
Subcategoría: Transistors
Tipo de transistor: 1 N-Channel
Tiempo de retardo de apagado típico: 47 ns
Tiempo típico de demora de encendido: 19 ns
Peso de la unidad: 6 g
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Atributos seleccionados: 0

Hoja de datos

PCN

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CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

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