2EDN7434FXTMA1

Infineon Technologies
726-2EDN7434FXTMA1
2EDN7434FXTMA1

Fabricante:

Descripción:
Controladores de puertas LOW SIDE DRIVERS

Modelo ECAD:
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En existencias: 684

Existencias:
684 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
39 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
$-.--
Precio ext.:
$-.--
Est. Tarifa:

Precio (USD)

Cantidad Precio unitario
Precio ext.
$0.67 $0.67
$0.474 $4.74
$0.426 $10.65
$0.372 $37.20
$0.347 $86.75
$0.331 $165.50
$0.319 $319.00
Envase tipo carrete completo (pedir en múltiplos de 2500)
$0.303 $757.50
$0.293 $1,465.00

Atributo del producto Valor de atributo Seleccionar atributo
Infineon
Categoría de producto: Controladores de puertas
RoHS:  
MOSFET Gate Drivers
Low-Side
SMD/SMT
DSO-8
2 Driver
2 Output
4 A
4.5 V
20 V
Non-Inverting
8.6 ns
6 ns
- 40 C
+ 150 C
Reel
Cut Tape
Marca: Infineon Technologies
País de ensamblaje: Not Available
País de difusión: Not Available
País de origen: DE
Voltaje de entrada - Máx.: 20 V
Voltaje de entrada - Mín.: - 10 V
Corriente de suministro operativa: 900 uA
Tipo de producto: Gate Drivers
Retraso de propagación - Máx.: 25 ns
Rds On - Resistencia entre drenaje y fuente: 1.7 Ohms
Cantidad de empaque de fábrica: 2500
Subcategoría: PMIC - Power Management ICs
Tecnología: Si
Alias de las piezas n.º: 2EDN7434F SP005350293
Productos encontrados:
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Atributos seleccionados: 0

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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

2ED EiceDRIVER™ 2-Channel MOSFET Driver ICs

Infineon Technologies 2ED EiceDRIVER™ 2-Channel MOSFET Driver ICs are the crucial link between Control ICs and powerful MOSFET and GaN switching devices. These MOSFET driver ICs enable high system level efficiencies, excellent power density, and consistent system robustness.

Fast DC EV Charging Solutions

Infineon Technologies Fast DC Electric Vehicle (EV) Charging Solutions address the needs for e-mobility. With the ever-growing number of electric vehicles on the market and pressure from governments to reduce vehicle emissions to zero by 2050, there is a great need for more efficient charging solutions. As various consumer studies show, the acceptance of electromobility depends largely on the availability and duration of the charging process. High-power DC charging stations are the answer to these market requirements. Today, a typical electric vehicle can charge about 80% of its battery capacity in less than 10 minutes. This is comparable to refueling a conventional car with an internal combustion engine. Infineon helps bring energy-efficient DC fast-charging designs to life. Benefit from a comprehensive, ready-to-implement one-stop product and design portfolio that covers the entire product range from power conversion, microcontrollers, security, auxiliary power supply, and communication.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.