IDH12SG60CXKSA2

Infineon Technologies
726-IDH12SG60CXKSA2
IDH12SG60CXKSA2

Fabricante:

Descripción:
Diodos Schottky de SiC SIC DIODES

Ciclo de vida:
NRND:
No recomendado para nuevos diseños.
Modelo ECAD:
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En existencias: 1,247

Existencias:
1,247
Se puede enviar inmediatamente
En pedido:
500
Plazo de entrega de fábrica:
52
Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
$-.--
Precio ext.:
$-.--
Est. Tarifa:

Precio (USD)

Cantidad Precio unitario
Precio ext.
$7.51 $7.51
$4.92 $49.20
$3.62 $362.00
$3.22 $1,610.00
$2.84 $2,840.00

Producto similar

Infineon Technologies IDH12G65C5XKSA2
Infineon Technologies
Diodos Schottky de SiC SIC DIODES

Atributo del producto Valor de atributo Seleccionar atributo
Infineon
Categoría de producto: Diodos Schottky de SiC
RoHS:  
Through Hole
TO-220-2
Single
12 A
600 V
1.8 V
59 A
1 uA
- 55 C
+ 175 C
XDH12SG60
Tube
Marca: Infineon Technologies
País de ensamblaje: MY
País de difusión: AT
País de origen: AT
Dp - Disipación de potencia : 125 W
Tipo de producto: SiC Schottky Diodes
Cantidad de empaque de fábrica: 500
Subcategoría: Diodes & Rectifiers
Nombre comercial: CoolSiC
Vr - Tensión inversa: 600 V
Alias de las piezas n.º: IDH12SG60C SP001632404
Peso de la unidad: 2.002 g
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CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
ECCN:
EAR99

600V CoolSiC™ Schottky Diodes

Infineon 600V CoolSiC™ Schottky Diodes feature low device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. These devices are available in the TO-220 and D2PAK packages. The small form factor of the DPAK makes it particularly interesting for high-power density surface mount designs. The introduction of the DPAK further extends Infineon's product offering to account for different customer needs.

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.