IDM02G120C5XTMA1

Infineon Technologies
726-IDM02G120C5XTMA1
IDM02G120C5XTMA1

Fabricante:

Descripción:
Diodos Schottky de SiC SIC CHIP/DISCRETE

Hoja de datos:
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En existencias: 90

Existencias:
90 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
30 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Se establece un tiempo de entrega prolongado para este producto.
Mínimo: 1   Múltiples: 1
Precio unitario:
$-.--
Precio ext.:
$-.--
Est. Tarifa:
Empaque:
Envase tipo carrete completo (pedir en múltiplos de 2500)

Precio (USD)

Cantidad Precio unitario
Precio ext.
Cinta cortada / MouseReel™ †
$2.37 $2.37
$1.52 $15.20
$1.04 $104.00
$0.86 $430.00
$0.792 $792.00
Envase tipo carrete completo (pedir en múltiplos de 2500)
$0.723 $1,807.50
† $7.00 Se agregará y calculará la tarifa de MouseReel™ en su carrito de compras. Ningún artículo de MouseReel™ se puede cancelar ni devolver. ↩

Atributo del producto Valor de atributo Seleccionar atributo
Infineon
Categoría de producto: Diodos Schottky de SiC
RoHS:  
SMD/SMT
DPAK-2 (TO-252-2)
Single
2 A
1.2 kV
1.4 V
37 A
1.2 uA
- 55 C
+ 175 C
IDM02G120C5
Reel
Cut Tape
MouseReel
Marca: Infineon Technologies
País de ensamblaje: Not Available
País de difusión: Not Available
País de origen: AT
Dp - Disipación de potencia : 98 W
Tipo de producto: SiC Schottky Diodes
Cantidad de empaque de fábrica: 2500
Subcategoría: Diodes & Rectifiers
Nombre comercial: CoolSiC
Vr - Tensión inversa: 1.2 kV
Alias de las piezas n.º: IDM02G120C5 SP001127112
Peso de la unidad: 454 mg
Productos encontrados:
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Atributos seleccionados: 0

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CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
MXHTS:
8541100101
ECCN:
EAR99

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Fast DC EV Charging Solutions

Infineon Technologies Fast DC Electric Vehicle (EV) Charging Solutions address the needs for e-mobility. With the ever-growing number of electric vehicles on the market and pressure from governments to reduce vehicle emissions to zero by 2050, there is a great need for more efficient charging solutions. As various consumer studies show, the acceptance of electromobility depends largely on the availability and duration of the charging process. High-power DC charging stations are the answer to these market requirements. Today, a typical electric vehicle can charge about 80% of its battery capacity in less than 10 minutes. This is comparable to refueling a conventional car with an internal combustion engine. Infineon helps bring energy-efficient DC fast-charging designs to life. Benefit from a comprehensive, ready-to-implement one-stop product and design portfolio that covers the entire product range from power conversion, microcontrollers, security, auxiliary power supply, and communication.

Diodos Schottky de 5° generación CoolSiC de 1200 V

Infineon 1200V CoolSiC Generation 5 Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Generation 5 target solar inverters, UPS, 3P SMPS, energy storage and motor drives applications. With Generation 5, reduction of forward voltage and its temperature dependency brings a new level of system efficiency. Moreover, an improved thermal performance compared to a silicon based solution increases system reliability and the possibility to increase output power in a given form factor. Combined with a Si HighSpeed 3 IGBT, they deliver 40% lower Si IGBT turn-on losses and reduced EMI.
Learn More

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

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