IPD80R3K3P7ATMA1

Infineon Technologies
726-IPD80R3K3P7ATMA1
IPD80R3K3P7ATMA1

Fabricante:

Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 800V CoolMOS P7PowerDevice

Hoja de datos:
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En existencias: 3,174

Existencias:
3,174 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
21 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
$-.--
Precio ext.:
$-.--
Est. Tarifa:
Empaque:
Envase tipo carrete completo (pedir en múltiplos de 2500)

Precio (USD)

Cantidad Precio unitario
Precio ext.
Cinta cortada / MouseReel™ †
$1.32 $1.32
$0.815 $8.15
$0.537 $53.70
$0.422 $211.00
$0.361 $361.00
Envase tipo carrete completo (pedir en múltiplos de 2500)
$0.326 $815.00
$0.272 $1,360.00
† $7.00 Se agregará y calculará la tarifa de MouseReel™ en su carrito de compras. Ningún artículo de MouseReel™ se puede cancelar ni devolver. ↩

Atributo del producto Valor de atributo Seleccionar atributo
Infineon
Categoría de producto: Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
RoHS:  
REACH - SVHC:
Si
SMD/SMT
DPAK-3 (TO-252-3)
N-Channel
1 Channel
800 V
1.9 A
2.8 Ohms
- 20 V, 20 V
2.5 V
5.8 nC
- 55 C
+ 150 C
18 W
Enhancement
CoolMOS
Reel
Cut Tape
MouseReel
Marca: Infineon Technologies
Configuración: Single
País de ensamblaje: DE
País de difusión: CN
País de origen: CN
Tiempo de caída: 40 ns
Tipo de producto: MOSFETs
Tiempo de subida: 10 ns
Serie: CoolMOS P7
Cantidad de empaque de fábrica: 2500
Subcategoría: Transistors
Tipo de transistor: 1 N-Channel
Tiempo de retardo de apagado típico: 40 ns
Tiempo típico de demora de encendido: 12 ns
Alias de las piezas n.º: IPD80R3K3P7 SP001636440
Peso de la unidad: 360 mg
Productos encontrados:
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Atributos seleccionados: 0

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

CoolMOS™ Superjunction MOSFETs

Infineon CoolMOS™ Power Transistors provide all the benefits of a fast-switching SJ MOSFET. Combined with the generation CoolMOS 7, Infineon continues to set price, performance, and quality benchmarks.

CoolMOS™ 7 Superjunction MOSFETs

Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs are optimized for energy efficiency, power density, and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, adapters and chargers can be made smaller, lighter, and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ P7 MOSFETs

Infineon Technologies CoolMOS™ P7 MOSFETs deliver a best-in-class price/performance ratio with excellent ease of use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications, including adapters and chargers, lighting, audio SMPS, AUX, and industrial power. The 600V CoolMOS P7 power MOSFETs target low-power and high-power SMPS applications like solar inverters, servers, telecom, and EV charging stations. Infineon P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

800V CoolMOS™ P7 MOSFETs

Infineon 800V CoolMOS™ P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.

USB-C Chargers & Adapters

Infineon Technologies offers tailor-made semiconductors that consider customers’ priorities - price/performance vs. (ultra) high power density. The portfolio comprises the entire USB-C™ source product chain, ranging from HV/LV power switches to PWM controllers, USB-C controllers for power delivery, and ESD protection devices.

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