S29GL01GS12TFIV10

Infineon Technologies
797-S29GL01GS12TFIV1
S29GL01GS12TFIV10

Fabricante:

Descripción:
Memoria flash tipo NOR 1G 3V 120ns Parallel Memoria flash tipo NOR

Hoja de datos:
Modelo ECAD:
Descargue Library Loader gratis para convertir este archivo para su herramienta ECAD. Conozca más sobre el modelo ECAD.
Más información
Conozca más sobre Infineon Technologies S29GL01GS12TFIV10

En existencias: 825

Existencias:
825 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
16 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
$-.--
Precio ext.:
$-.--
Est. Tarifa:

Precio (USD)

Cantidad Precio unitario
Precio ext.
$16.26 $16.26
$15.09 $150.90
$14.62 $365.50
$13.97 $698.50
$13.62 $1,362.00
$13.42 $3,355.00
$13.08 $6,540.00
$13.07 $11,893.70

Atributo del producto Valor de atributo Seleccionar atributo
Infineon
Categoría de producto: Memoria flash tipo NOR
RoHS:  
SMD/SMT
TSOP-56
S29GL01G/512/256/128S
1 Gbit
2.7 V
3.6 V
60 mA
Parallel
64 M x 16
16 bit
Asynchronous
- 40 C
+ 85 C
Tray
Marca: Infineon Technologies
País de ensamblaje: Not Available
País de difusión: Not Available
País de origen: TH
Sensibles a la humedad: Yes
Tipo de producto: NOR Flash
Velocidad: 120 ns
Cantidad de empaque de fábrica: 910
Subcategoría: Memory & Data Storage
Nombre comercial: MirrorBit
Productos encontrados:
Para mostrar productos similares, seleccione al menos una casilla de verificación
Seleccione al menos una de las casillas de verificación anteriores para mostrar productos similares en esta categoría.
Atributos seleccionados: 0

Hoja de datos

CNHTS:
8542329090
CAHTS:
8542320040
USHTS:
8542320051
JPHTS:
8542320312
KRHTS:
8542321040
TARIC:
8542326100
MXHTS:
8542320299
ECCN:
3A991.b.1.a

S29GL01G/512/256/128S MIRRORBIT™ Flash Memory

Infineon Technologies S29GL01G/512/256/128S MIRRORBIT™ Eclipse Flash Memory is optimized for voltage, density, cost-per-bit, reliability, performance, and scalability needs. With densities from 32MB-2GB, each MIRRORBIT Memory Device requires only a single 3.0V power supply for read and write functions. The entire command set is compatible with the JEDEC Flash standards. The MIRRORBIT GL Flash Memory Device family supports Universal Footprint, which provides one footprint across all densities. The flash memory also supports product families and process technologies. This allows manufacturers to design single platform and simple scale Flash memory capacity up or down, depending on features and functionality.

MIRRORBIT™ NOR GL Flash Memory Device

Infineon Technologies MIRRORBIT™ NOR GL Flash Memory Devices include the 100ns access speeds. This additional offering of Cypress MIRRORBIT NOR GL Flash Memory now provides the fastest access times in the high-density versions available. MIRRORBIT NOR GL Flash Memory Devices are ideal for today's embedded applications that require higher density, better performance, and lower power consumption. Cypress MIRRORBIT GL NOR Flash family is optimized for various embedded applications' voltage, density, cost-per-bit, reliability, performance, and scalability needs. With densities from 32MB to 2GB, each MIRRORBIT NOR GL Flash Memory Device requires only a 3.0V power supply for reading and writing functions and is entirely command set compatible with the JEDEC Flash standards. The Cypress MIRRORBIT GL Flash Memory Device family supports Cypress' Universal Footprint, which provides one footprint across all densities, product families, and process technologies, allowing manufacturers to design a single platform and simply scale Flash memory capacity up or down, depending on the features and functionality of the target end system.

S29 GL-S MIRRORBIT™ Eclipse™ Flash

Infineon Technologies S29 GL-S MIRRORBIT™ Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MIRRORBIT Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. Infineon S29 GL-S MIRRORBIT Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.

Se ha producido un error inesperado.


¿Tiene alguna pregunta? Visite el Centro de ayuda.
Si tiene preguntas sobre un pedido específico, inicie sesión en su cuenta.

Si tiene más problemas, comuníquese con nosotros al 800-346-6873 o envíe un correo electrónico a help@mouser.com.