|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 800V 13 Ohm 1A
- STQ1NK80ZR-AP
- STMicroelectronics
-
1:
$1.27
-
4,992En existencias
|
N.º de artículo de Mouser
511-STQ1NK80ZR-AP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 800V 13 Ohm 1A
|
|
4,992En existencias
|
|
|
$1.27
|
|
|
$0.795
|
|
|
$0.525
|
|
|
$0.409
|
|
|
$0.339
|
|
|
Ver
|
|
|
$0.371
|
|
|
$0.317
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-92-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 60 mOhm typ., 46 A MDmesh DM6 Power MOSFET
- STW65N60DM6
- STMicroelectronics
-
1:
$7.81
-
508En existencias
|
N.º de artículo de Mouser
511-STW65N60DM6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 60 mOhm typ., 46 A MDmesh DM6 Power MOSFET
|
|
508En existencias
|
|
|
$7.81
|
|
|
$5.33
|
|
|
$3.91
|
|
|
$3.83
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 0.032Ohm 30A N-Channel
- STB36NF06LT4
- STMicroelectronics
-
1:
$2.12
-
1,248En existencias
|
N.º de artículo de Mouser
511-STB36NF06LT4
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 0.032Ohm 30A N-Channel
|
|
1,248En existencias
|
|
|
$2.12
|
|
|
$1.36
|
|
|
$0.917
|
|
|
$0.731
|
|
|
$0.65
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 55 Volt 80 Amp
- STP80NF55-06
- STMicroelectronics
-
1:
$2.78
-
1,478En existencias
|
N.º de artículo de Mouser
511-STP80NF55-06
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 55 Volt 80 Amp
|
|
1,478En existencias
|
|
|
$2.78
|
|
|
$1.38
|
|
|
$1.27
|
|
|
$1.09
|
|
|
$0.943
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 11 Amp
- STP11NM60FDFP
- STMicroelectronics
-
1:
$3.97
-
537En existencias
-
NRND
|
N.º de artículo de Mouser
511-STP11NM60FDFP
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 11 Amp
|
|
537En existencias
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
IGBTs Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package
- STGP8M120DF3
- STMicroelectronics
-
1:
$5.29
-
178En existencias
|
N.º de artículo de Mouser
511-STGP8M120DF3
|
STMicroelectronics
|
IGBTs Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package
|
|
178En existencias
|
|
|
$5.29
|
|
|
$3.52
|
|
|
$2.85
|
|
|
$2.53
|
|
|
$2.24
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-channel -30 V, 11 mOhm typ., -45 A STripFET H6 Power MOSFET in a PowerFLAT 5x6
- STL45P3LLH6
- STMicroelectronics
-
1:
$1.93
-
2,917En existencias
|
N.º de artículo de Mouser
511-STL45P3LLH6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-channel -30 V, 11 mOhm typ., -45 A STripFET H6 Power MOSFET in a PowerFLAT 5x6
|
|
2,917En existencias
|
|
|
$1.93
|
|
|
$1.21
|
|
|
$0.795
|
|
|
$0.631
|
|
|
$0.56
|
|
|
$0.475
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
P-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package
- STP16N65M2
- STMicroelectronics
-
1:
$2.84
-
251En existencias
|
N.º de artículo de Mouser
511-STP16N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package
|
|
251En existencias
|
|
|
$2.84
|
|
|
$1.83
|
|
|
$1.31
|
|
|
$1.08
|
|
|
$0.948
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 380 mOhm typ., 10 A MDmesh DM2 Power MOSFET in
- STB12N60DM2AG
- STMicroelectronics
-
1:
$3.38
-
204En existencias
|
N.º de artículo de Mouser
511-STB12N60DM2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 380 mOhm typ., 10 A MDmesh DM2 Power MOSFET in
|
|
204En existencias
|
|
|
$3.38
|
|
|
$2.20
|
|
|
$1.69
|
|
|
$1.41
|
|
|
$1.22
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
|
|
|
IGBTs Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
- STGB40V60F
- STMicroelectronics
-
1:
$3.71
-
74En existencias
|
N.º de artículo de Mouser
511-STGB40V60F
|
STMicroelectronics
|
IGBTs Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
|
|
74En existencias
|
|
|
$3.71
|
|
|
$2.42
|
|
|
$1.66
|
|
|
$1.46
|
|
|
$1.36
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
SMD/SMT
|
D2PAK
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 0.062 Ohm typ., 4.5 A STripFET F7 Power MOSFET in a PowerFLAT 3
- STL4N10F7
- STMicroelectronics
-
1:
$0.98
-
823En existencias
|
N.º de artículo de Mouser
511-STL4N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 0.062 Ohm typ., 4.5 A STripFET F7 Power MOSFET in a PowerFLAT 3
|
|
823En existencias
|
|
|
$0.98
|
|
|
$0.611
|
|
|
$0.398
|
|
|
$0.307
|
|
|
$0.271
|
|
|
$0.233
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-3.3x3.3-8
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.59 Ohm typ., 6 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VH
- STL10LN80K5
- STMicroelectronics
-
1:
$4.01
-
923En existencias
|
N.º de artículo de Mouser
511-STL10LN80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.59 Ohm typ., 6 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VH
|
|
923En existencias
|
|
|
$4.01
|
|
|
$2.63
|
|
|
$1.94
|
|
|
$1.72
|
|
|
$1.52
|
|
|
$1.52
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-VHV-8
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel, 40 V, 7.0 mOhm typ., 40 A, STripFET F7 Power M
- STL64DN4F7AG
- STMicroelectronics
-
1:
$2.16
-
579En existencias
|
N.º de artículo de Mouser
511-STL64DN4F7AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel, 40 V, 7.0 mOhm typ., 40 A, STripFET F7 Power M
|
|
579En existencias
|
|
|
$2.16
|
|
|
$1.39
|
|
|
$0.957
|
|
|
$0.811
|
|
|
$0.678
|
|
|
$0.645
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
|
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
- STU6N65M2
- STMicroelectronics
-
1:
$1.61
-
45En existencias
|
N.º de artículo de Mouser
511-STU6N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
|
|
45En existencias
|
|
|
$1.61
|
|
|
$0.835
|
|
|
$0.622
|
|
|
$0.518
|
|
|
Ver
|
|
|
$0.437
|
|
|
$0.431
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
|
|
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
- SCT019HU120G3AG
- STMicroelectronics
-
1:
$20.08
-
5En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-SCT019HU120G3AG
Nuevo producto
|
STMicroelectronics
|
MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
|
|
5En existencias
|
|
|
$20.08
|
|
|
$16.52
|
|
|
$14.29
|
|
|
$12.63
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
|
|
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel 40 V, 9 mOhm typ., 18 A STripFET F7 Power MOSFET
- STL52DN4LF7AG
- STMicroelectronics
-
1:
$2.00
-
2,805En existencias
|
N.º de artículo de Mouser
511-STL52DN4LF7AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel 40 V, 9 mOhm typ., 18 A STripFET F7 Power MOSFET
|
|
2,805En existencias
|
|
|
$2.00
|
|
|
$1.12
|
|
|
$0.915
|
|
|
$0.848
|
|
|
$0.772
|
|
|
$0.479
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-4
|
N-Channel
|
|
|
|
Transistores Darlington PWR BIP/S.SIGNAL
- 2ST501T
- STMicroelectronics
-
1:
$2.17
-
1,936En existencias
|
N.º de artículo del Fabricante
2ST501T
N.º de artículo de Mouser
511-2ST501T
|
STMicroelectronics
|
Transistores Darlington PWR BIP/S.SIGNAL
|
|
1,936En existencias
|
|
|
$2.17
|
|
|
$0.906
|
|
|
$0.829
|
|
|
$0.70
|
|
|
Ver
|
|
|
$0.651
|
|
|
$0.633
|
|
|
$0.586
|
|
Min.: 1
Mult.: 1
|
|
Darlington Transistors
|
|
Through Hole
|
TO-220-3
|
NPN
|
|
|
|
Transistores Darlington PWR BIP/S.SIGNAL
- 2STP535FP
- STMicroelectronics
-
1:
$2.49
-
959En existencias
|
N.º de artículo de Mouser
511-2STP535FP
|
STMicroelectronics
|
Transistores Darlington PWR BIP/S.SIGNAL
|
|
959En existencias
|
|
|
$2.49
|
|
|
$1.23
|
|
|
$1.10
|
|
|
$0.885
|
|
|
Ver
|
|
|
$0.814
|
|
|
$0.755
|
|
|
$0.715
|
|
|
$0.709
|
|
Min.: 1
Mult.: 1
|
|
Darlington Transistors
|
|
Through Hole
|
TO-220FP-3
|
NPN
|
|
|
|
Transistores bipolares - Transistores de empalme bipolar (BJT) High voltage fast-switching NPN power transistor
- BUL1102E
- STMicroelectronics
-
1:
$1.62
-
1,523En existencias
|
N.º de artículo de Mouser
511-BUL1102E
|
STMicroelectronics
|
Transistores bipolares - Transistores de empalme bipolar (BJT) High voltage fast-switching NPN power transistor
|
|
1,523En existencias
|
|
|
$1.62
|
|
|
$1.24
|
|
|
$0.879
|
|
|
$0.721
|
|
|
Ver
|
|
|
$0.572
|
|
|
$0.556
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
Through Hole
|
TO-220-3
|
NPN
|
|
|
|
Transistores bipolares - Transistores de empalme bipolar (BJT) High voltage fast-switching NPN power transistor
- ST13007D
- STMicroelectronics
-
1:
$2.12
-
1,315En existencias
|
N.º de artículo de Mouser
511-ST13007D
|
STMicroelectronics
|
Transistores bipolares - Transistores de empalme bipolar (BJT) High voltage fast-switching NPN power transistor
|
|
1,315En existencias
|
|
|
$2.12
|
|
|
$1.03
|
|
|
$0.781
|
|
|
$0.704
|
|
|
Ver
|
|
|
$0.67
|
|
|
$0.619
|
|
|
$0.568
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
Through Hole
|
TO-220-3
|
NPN
|
|
|
|
Transistores Darlington NPN Power Darlington
- ST901T
- STMicroelectronics
-
1:
$1.39
-
3,279En existencias
|
N.º de artículo del Fabricante
ST901T
N.º de artículo de Mouser
511-ST901T
|
STMicroelectronics
|
Transistores Darlington NPN Power Darlington
|
|
3,279En existencias
|
|
|
$1.39
|
|
|
$0.654
|
|
|
$0.53
|
|
|
$0.41
|
|
|
Ver
|
|
|
$0.367
|
|
|
$0.345
|
|
|
$0.33
|
|
|
$0.318
|
|
Min.: 1
Mult.: 1
|
|
Darlington Transistors
|
|
Through Hole
|
TO-220-3
|
NPN
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.55 Ohm typ. 7.5A
- STB10N60M2
- STMicroelectronics
-
1:
$2.43
-
1,075En existencias
|
N.º de artículo de Mouser
511-STB10N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.55 Ohm typ. 7.5A
|
|
1,075En existencias
|
|
|
$2.43
|
|
|
$1.57
|
|
|
$1.07
|
|
|
$0.868
|
|
|
$0.785
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II
- STD3NM60N
- STMicroelectronics
-
1:
$1.74
-
2,222En existencias
|
N.º de artículo de Mouser
511-STD3NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II
|
|
2,222En existencias
|
|
|
$1.74
|
|
|
$0.947
|
|
|
$0.695
|
|
|
$0.591
|
|
|
$0.537
|
|
|
$0.492
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 1.06Ohm 4.5A MDmesh M2
- STD6N60M2
- STMicroelectronics
-
1:
$1.99
-
2,265En existencias
|
N.º de artículo de Mouser
511-STD6N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 1.06Ohm 4.5A MDmesh M2
|
|
2,265En existencias
|
|
|
$1.99
|
|
|
$1.27
|
|
|
$0.862
|
|
|
$0.731
|
|
|
$0.634
|
|
|
$0.581
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP packag
- STF26N60M2
- STMicroelectronics
-
1:
$3.41
-
981En existencias
|
N.º de artículo de Mouser
511-STF26N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP packag
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981En existencias
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$3.41
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$1.72
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$1.55
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$1.26
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$1.25
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Min.: 1
Mult.: 1
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MOSFETs
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Si
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Through Hole
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TO-220-3
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N-Channel
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