|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V,40V)
- IPC70N04S5L4R2ATMA1
- Infineon Technologies
-
1:
$1.37
-
9,700En existencias
|
N.º de artículo de Mouser
726-IPC70N04S5L4R2AT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V,40V)
|
|
9,700En existencias
|
|
|
$1.37
|
|
|
$0.861
|
|
|
$0.57
|
|
|
$0.445
|
|
|
Ver
|
|
|
$0.355
|
|
|
$0.38
|
|
|
$0.373
|
|
|
$0.355
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
70 A
|
3.4 mOhms
|
- 16 V, 16 V
|
1.2 V
|
30 nC
|
- 55 C
|
+ 175 C
|
50 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 55V 20A TDSON-8 OptiMOS
- IPG20N06S2L-50
- Infineon Technologies
-
1:
$1.71
-
2,971En existencias
|
N.º de artículo de Mouser
726-IPG20N06S2L-50
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 55V 20A TDSON-8 OptiMOS
|
|
2,971En existencias
|
|
|
$1.71
|
|
|
$1.10
|
|
|
$0.727
|
|
|
$0.573
|
|
|
Ver
|
|
|
$0.484
|
|
|
$0.518
|
|
|
$0.491
|
|
|
$0.484
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
55 V
|
20 A
|
50 mOhms
|
- 20 V, 20 V
|
1.6 V
|
17 nC
|
- 55 C
|
+ 175 C
|
51 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 OptiMOS 3
- BSC018N04LS G
- Infineon Technologies
-
1:
$1.87
-
9,890En existencias
|
N.º de artículo de Mouser
726-BSC018N04LSG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 OptiMOS 3
|
|
9,890En existencias
|
|
|
$1.87
|
|
|
$0.884
|
|
|
$0.661
|
|
|
$0.56
|
|
|
$0.548
|
|
|
$0.548
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
100 A
|
1.5 mOhms
|
- 20 V, 20 V
|
1.2 V
|
150 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 25V 100A TDSON-8 OptiMOS
- BSC018NE2LS
- Infineon Technologies
-
1:
$1.62
-
5,050En existencias
-
5,000En pedido
|
N.º de artículo de Mouser
726-BSC018NE2LS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 25V 100A TDSON-8 OptiMOS
|
|
5,050En existencias
5,000En pedido
|
|
|
$1.62
|
|
|
$1.03
|
|
|
$0.445
|
|
|
$0.445
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
25 V
|
100 A
|
1.8 mOhms
|
- 20 V, 20 V
|
2 V
|
19 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- BSZ099N06LS5ATMA1
- Infineon Technologies
-
1:
$1.37
-
20,911En existencias
|
N.º de artículo de Mouser
726-BSZ099N06LS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
20,911En existencias
|
|
|
$1.37
|
|
|
$0.88
|
|
|
$0.57
|
|
|
$0.459
|
|
|
$0.379
|
|
|
$0.354
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
40 A
|
9.9 mOhms
|
- 20 V, 20 V
|
1.1 V
|
6.9 nC
|
- 55 C
|
+ 150 C
|
36 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 120V 120A TO220-3 OptiMOS 3
- IPP041N12N3 G
- Infineon Technologies
-
1:
$5.25
-
996En existencias
-
1,000En pedido
|
N.º de artículo de Mouser
726-IPP041N12N3GXK
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 120V 120A TO220-3 OptiMOS 3
|
|
996En existencias
1,000En pedido
|
|
|
$5.25
|
|
|
$3.49
|
|
|
$2.83
|
|
|
$2.50
|
|
|
$2.22
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
120 V
|
120 A
|
3.5 mOhms
|
- 20 V, 20 V
|
2 V
|
211 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
OptiMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 100A TO220-3 OptiMOS 3
- IPP075N15N3GXKSA1
- Infineon Technologies
-
1:
$3.87
-
1,741En existencias
-
2,000En pedido
|
N.º de artículo de Mouser
726-IPP075N15N3GXKSA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 100A TO220-3 OptiMOS 3
|
|
1,741En existencias
2,000En pedido
|
|
|
$3.87
|
|
|
$1.97
|
|
|
$1.79
|
|
|
$1.55
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
150 V
|
100 A
|
6.2 mOhms
|
- 20 V, 20 V
|
2 V
|
93 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
OptiMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 120V 56A TO220-3 OptiMOS 3
- IPP147N12N3 G
- Infineon Technologies
-
1:
$2.02
-
2,719En existencias
|
N.º de artículo de Mouser
726-IPP147N12N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 120V 56A TO220-3 OptiMOS 3
|
|
2,719En existencias
|
|
|
$2.02
|
|
|
$0.976
|
|
|
$0.874
|
|
|
$0.635
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
120 V
|
56 A
|
14.7 mOhms
|
- 20 V, 20 V
|
3 V
|
37 nC
|
- 55 C
|
+ 175 C
|
107 W
|
Enhancement
|
|
OptiMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 70A D2PAK-2 OptiMOS-T2
- IPB70N04S4-06
- Infineon Technologies
-
1:
$1.95
-
581En existencias
|
N.º de artículo de Mouser
726-IPB70N04S4-06
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 70A D2PAK-2 OptiMOS-T2
|
|
581En existencias
|
|
|
$1.95
|
|
|
$1.25
|
|
|
$0.862
|
|
|
$0.731
|
|
|
$0.61
|
|
|
$0.581
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
40 V
|
70 A
|
5.3 mOhms
|
- 20 V, 20 V
|
2 V
|
32 nC
|
- 55 C
|
+ 175 C
|
58 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 90A DPAK-2 OptiMOS-T2
- IPD90N03S4L-02
- Infineon Technologies
-
1:
$2.18
-
1,585En existencias
|
N.º de artículo de Mouser
726-IPD90N03S4L-02
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 90A DPAK-2 OptiMOS-T2
|
|
1,585En existencias
|
|
|
$2.18
|
|
|
$0.974
|
|
|
$0.938
|
|
|
$0.90
|
|
|
$0.792
|
|
|
$0.779
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
30 V
|
90 A
|
1.8 mOhms
|
- 16 V, 16 V
|
1 V
|
140 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 90A DPAK-2 OptiMOS-T2
- IPD90N04S4-05
- Infineon Technologies
-
1:
$1.45
-
1,897En existencias
|
N.º de artículo de Mouser
726-IPD90N04S4-05
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 90A DPAK-2 OptiMOS-T2
|
|
1,897En existencias
|
|
|
$1.45
|
|
|
$0.913
|
|
|
$0.606
|
|
|
$0.478
|
|
|
$0.395
|
|
|
Ver
|
|
|
$0.431
|
|
|
$0.38
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
40 V
|
86 A
|
4.3 mOhms
|
- 20 V, 20 V
|
2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
65 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 73A TDSON-8 OptiMOS 3
- BSC059N04LS G
- Infineon Technologies
-
1:
$1.21
-
5,036En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSC059N04LSG
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 73A TDSON-8 OptiMOS 3
|
|
5,036En existencias
|
|
|
$1.21
|
|
|
$0.754
|
|
|
$0.496
|
|
|
$0.394
|
|
|
Ver
|
|
|
$0.296
|
|
|
$0.35
|
|
|
$0.328
|
|
|
$0.296
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
73 A
|
4.9 mOhms
|
- 20 V, 20 V
|
1.2 V
|
40 nC
|
- 55 C
|
+ 150 C
|
50 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 200V 88A D2PAK-2
- IPB107N20NAXT
- Infineon Technologies
-
1:
$9.86
-
3,837En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPB107N20NAATMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 200V 88A D2PAK-2
|
|
3,837En existencias
|
|
|
$9.86
|
|
|
$7.48
|
|
|
$6.23
|
|
|
$5.55
|
|
|
$5.19
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
200 V
|
88 A
|
9.6 mOhms
|
- 20 V, 20 V
|
2 V
|
87 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 20A TDSON-8 OptiMOS-T2
- IPG20N04S4-08
- Infineon Technologies
-
1:
$2.54
-
9,352En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPG20N04S4-08
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 20A TDSON-8 OptiMOS-T2
|
|
9,352En existencias
|
|
|
$2.54
|
|
|
$1.61
|
|
|
$1.07
|
|
|
$0.882
|
|
|
Ver
|
|
|
$0.701
|
|
|
$0.781
|
|
|
$0.738
|
|
|
$0.701
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
40 V
|
20 A
|
7.6 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 175 C
|
65 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 90A D2PAK-2 OptiMOS 3
- IPB037N06N3 G
- Infineon Technologies
-
1:
$2.78
-
879En existencias
|
N.º de artículo de Mouser
726-IPB037N06N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 90A D2PAK-2 OptiMOS 3
|
|
879En existencias
|
|
|
$2.78
|
|
|
$1.78
|
|
|
$1.21
|
|
|
$1.04
|
|
|
$0.88
|
|
|
$0.872
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
60 V
|
90 A
|
3 mOhms
|
- 20 V, 20 V
|
2 V
|
98 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 90A DPAK-2 OptiMOS-T2
- IPD90N04S4-02
- Infineon Technologies
-
1:
$2.39
-
1,092En existencias
|
N.º de artículo de Mouser
726-IPD90N04S4-02
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 90A DPAK-2 OptiMOS-T2
|
|
1,092En existencias
|
|
|
$2.39
|
|
|
$1.54
|
|
|
$1.05
|
|
|
$0.838
|
|
|
$0.779
|
|
|
$0.767
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
40 V
|
90 A
|
2.4 mOhms
|
- 20 V, 20 V
|
3 V
|
118 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IAUC45N04S6L063HATMA1
- Infineon Technologies
-
1:
$1.47
-
8,692En existencias
-
NRND
|
N.º de artículo de Mouser
726-IAUC45N04S6L063H
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
8,692En existencias
|
|
|
$1.47
|
|
|
$0.874
|
|
|
$0.756
|
|
|
$0.599
|
|
|
Ver
|
|
|
$0.499
|
|
|
$0.542
|
|
|
$0.506
|
|
|
$0.499
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
59 A
|
6.3 mOhms
|
- 16 V, 16 V
|
2 V
|
10 nC
|
- 55 C
|
+ 175 C
|
41 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IAUC60N04S6L045HATMA1
- Infineon Technologies
-
1:
$2.21
-
4,846En existencias
-
NRND
|
N.º de artículo de Mouser
726-IAUC60N04S6L045H
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
4,846En existencias
|
|
|
$2.21
|
|
|
$1.40
|
|
|
$0.938
|
|
|
$0.769
|
|
|
Ver
|
|
|
$0.612
|
|
|
$0.68
|
|
|
$0.644
|
|
|
$0.612
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
80 A
|
4.5 mOhms
|
- 16 V, 16 V
|
2 V
|
14 nC
|
- 55 C
|
+ 175 C
|
52 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) DIFFERENTIATED MOSFETS
- BSC0702LSATMA1
- Infineon Technologies
-
1:
$2.16
-
4,283En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSC0702LSATMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) DIFFERENTIATED MOSFETS
|
|
4,283En existencias
|
|
|
$2.16
|
|
|
$1.39
|
|
|
$0.938
|
|
|
$0.748
|
|
|
Ver
|
|
|
$0.668
|
|
|
$0.702
|
|
|
$0.668
|
|
|
$0.668
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
100 A
|
2.7 mOhms
|
- 20 V, 20 V
|
2.3 V
|
30 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 90A D2PAK-2 OptiMOS 3
- IPB037N06N3GATMA1
- Infineon Technologies
-
1:
$2.62
-
870En existencias
|
N.º de artículo de Mouser
726-IPB037N06N3GATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 90A D2PAK-2 OptiMOS 3
|
|
870En existencias
|
|
|
$2.62
|
|
|
$1.70
|
|
|
$1.16
|
|
|
$0.933
|
|
|
$0.872
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
60 V
|
90 A
|
3 mOhms
|
- 20 V, 20 V
|
2 V
|
98 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 120A D2PAK-2 OptiMOS-T2
- IPB120N04S4-01
- Infineon Technologies
-
1:
$3.60
-
737En existencias
|
N.º de artículo de Mouser
726-IPB120N04S4-01
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 120A D2PAK-2 OptiMOS-T2
|
|
737En existencias
|
|
|
$3.60
|
|
|
$2.35
|
|
|
$1.65
|
|
|
$1.44
|
|
|
$1.34
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
40 V
|
120 A
|
2 mOhms
|
- 20 V, 20 V
|
3 V
|
176 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 80A D2PAK-2
- IPB80N06S407ATMA2
- Infineon Technologies
-
1:
$2.33
-
1,002En existencias
|
N.º de artículo de Mouser
726-IPB80N06S407ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 80A D2PAK-2
|
|
1,002En existencias
|
|
|
$2.33
|
|
|
$1.50
|
|
|
$1.02
|
|
|
$0.826
|
|
|
$0.742
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
60 V
|
80 A
|
7.1 mOhms
|
- 20 V, 20 V
|
3 V
|
56 nC
|
- 55 C
|
+ 175 C
|
79 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 90A D2PAK-2 OptiMOS-T2
- IPB90N04S4-02
- Infineon Technologies
-
1:
$3.07
-
971En existencias
|
N.º de artículo de Mouser
726-IPB90N04S4-02
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 90A D2PAK-2 OptiMOS-T2
|
|
971En existencias
|
|
|
$3.07
|
|
|
$2.00
|
|
|
$1.38
|
|
|
$1.16
|
|
|
$1.09
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
40 V
|
90 A
|
2.1 mOhms
|
- 20 V, 20 V
|
3 V
|
91 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 120A D2PAK-2 OptiMOS-T2
- IPB120N04S4-02
- Infineon Technologies
-
1:
$3.24
-
873En existencias
|
N.º de artículo de Mouser
726-IPB120N04S4-02
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 120A D2PAK-2 OptiMOS-T2
|
|
873En existencias
|
|
|
$3.24
|
|
|
$2.11
|
|
|
$1.62
|
|
|
$1.39
|
|
|
$1.18
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
40 V
|
120 A
|
1.58 mOhms
|
- 20 V, 20 V
|
2 V
|
134 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TDSON-8 OptiMOS
- BSZ0901NSI
- Infineon Technologies
-
1:
$1.76
-
4,026En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSZ0901NSI
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TDSON-8 OptiMOS
|
|
4,026En existencias
|
|
|
$1.76
|
|
|
$1.12
|
|
|
$0.745
|
|
|
$0.599
|
|
|
Ver
|
|
|
$0.453
|
|
|
$0.515
|
|
|
$0.493
|
|
|
$0.453
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
142 A
|
2.2 mOhms
|
- 20 V, 20 V
|
2 V
|
41 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|