|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in a TO-220FP package
- STF4LN80K5
- STMicroelectronics
-
1:
$2.29
-
1,852En existencias
|
N.º de artículo de Mouser
511-STF4LN80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in a TO-220FP package
|
|
1,852En existencias
|
|
|
$2.29
|
|
|
$1.12
|
|
|
$1.01
|
|
|
$0.80
|
|
|
Ver
|
|
|
$0.709
|
|
|
$0.689
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
3 A
|
2.1 Ohms
|
- 30 V, 30 V
|
3 V
|
3.7 nC
|
- 55 C
|
+ 150 C
|
20 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 0.0016 Ohm 180A STripFET DG VI
- STH260N6F6-2
- STMicroelectronics
-
1:
$3.83
-
683En existencias
|
N.º de artículo de Mouser
511-STH260N6F6-2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 0.0016 Ohm 180A STripFET DG VI
|
|
683En existencias
|
|
|
$3.83
|
|
|
$3.06
|
|
|
$2.36
|
|
|
$2.09
|
|
|
$1.85
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
75 V
|
120 A
|
2.4 mOhms
|
- 20 V, 20 V
|
4 V
|
183 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V SuperMESH3 Zener-Protected 10A
- STP13N95K3
- STMicroelectronics
-
1:
$7.94
-
374En existencias
|
N.º de artículo de Mouser
511-STP13N95K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V SuperMESH3 Zener-Protected 10A
|
|
374En existencias
|
|
|
$7.94
|
|
|
$4.11
|
|
|
$3.91
|
|
|
$3.86
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
950 V
|
10 A
|
680 mOhms
|
- 30 V, 30 V
|
4 V
|
51 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220 package
- STP8N90K5
- STMicroelectronics
-
1:
$3.77
-
776En existencias
|
N.º de artículo de Mouser
511-STP8N90K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220 package
|
|
776En existencias
|
|
|
$3.77
|
|
|
$1.96
|
|
|
$1.77
|
|
|
$1.45
|
|
|
$1.40
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
900 V
|
8 A
|
680 mOhms
|
- 30 V, 30 V
|
5 V
|
11 nC
|
- 55 C
|
+ 150 C
|
130 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 V 0.95 Ohm 6 A Zener-protecte
- STU7N80K5
- STMicroelectronics
-
1:
$2.63
-
1,841En existencias
|
N.º de artículo de Mouser
511-STU7N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 V 0.95 Ohm 6 A Zener-protecte
|
|
1,841En existencias
|
|
|
$2.63
|
|
|
$1.22
|
|
|
$1.10
|
|
|
$0.931
|
|
|
$0.835
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
950 mOhms
|
- 30 V, 30 V
|
4 V
|
13.4 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET i
- STW58N65DM2AG
- STMicroelectronics
-
1:
$10.17
-
454En existencias
|
N.º de artículo de Mouser
511-STW58N65DM2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET i
|
|
454En existencias
|
|
|
$10.17
|
|
|
$9.05
|
|
|
$8.21
|
|
|
$6.83
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
48 A
|
65 mOhms
|
- 25 V, 25 V
|
4 V
|
88 nC
|
- 55 C
|
+ 150 C
|
360 W
|
Enhancement
|
AEC-Q101
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650 V, 90 mOhm typ., 28 A MDmesh DM6 Power MOSFET in
- STWA30N65DM6AG
- STMicroelectronics
-
1:
$7.27
-
340En existencias
|
N.º de artículo de Mouser
511-STWA30N65DM6AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650 V, 90 mOhm typ., 28 A MDmesh DM6 Power MOSFET in
|
|
340En existencias
|
|
|
$7.27
|
|
|
$4.36
|
|
|
$3.45
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
110 mOhms
|
- 25 V, 25 V
|
4.75 V
|
46 nC
|
- 55 C
|
+ 150 C
|
284 W
|
Enhancement
|
AEC-Q101
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 60 mOhm typ., 46 A MDmesh DM6 Power MOSFET in a TO-247 long lea
- STWA65N60DM6
- STMicroelectronics
-
1:
$7.21
-
585En existencias
|
N.º de artículo de Mouser
511-STWA65N60DM6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 60 mOhm typ., 46 A MDmesh DM6 Power MOSFET in a TO-247 long lea
|
|
585En existencias
|
|
|
$7.21
|
|
|
$5.33
|
|
|
$4.31
|
|
|
$3.75
|
|
|
$3.74
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
38 A
|
71 mOhms
|
- 25 V, 25 V
|
3.25 V
|
54 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 36 mOhm typ., 68 A MDmesh DM6 Power MOSFET in a TO-247 long lea
- STWA70N65DM6
- STMicroelectronics
-
1:
$12.99
-
596En existencias
-
599En pedido
|
N.º de artículo de Mouser
511-STWA70N65DM6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 36 mOhm typ., 68 A MDmesh DM6 Power MOSFET in a TO-247 long lea
|
|
596En existencias
599En pedido
|
|
|
$12.99
|
|
|
$11.05
|
|
|
$9.56
|
|
|
$8.45
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
68 A
|
40 mOhms
|
- 25 V, 25 V
|
4.75 V
|
125 nC
|
- 55 C
|
+ 150 C
|
450 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V, 2.4 mOhm typ., 120 A STripFET F6 Power MOSFET i
- STLD125N4F6AG
- STMicroelectronics
-
1:
$3.21
-
2,487En existencias
-
NRND
|
N.º de artículo de Mouser
511-STLD125N4F6AG
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V, 2.4 mOhm typ., 120 A STripFET F6 Power MOSFET i
|
|
2,487En existencias
|
|
|
$3.21
|
|
|
$2.10
|
|
|
$1.48
|
|
|
$1.26
|
|
|
$1.16
|
|
|
$1.16
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
40 V
|
120 A
|
2.4 mOhms
|
- 20 V, 20 V
|
2 V
|
91 nC
|
- 55 C
|
+ 175 C
|
130 W
|
Enhancement
|
AEC-Q101
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 340 mOhm typ., 11 A MDmesh M2 EP Power MOSFET in a DPAK package
- STD15N60M2-EP
- STMicroelectronics
-
1:
$2.32
-
2,461En existencias
-
NRND
|
N.º de artículo de Mouser
511-STD15N60M2-EP
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 340 mOhm typ., 11 A MDmesh M2 EP Power MOSFET in a DPAK package
|
|
2,461En existencias
|
|
|
$2.32
|
|
|
$1.28
|
|
|
$0.973
|
|
|
$0.869
|
|
|
$0.726
|
|
|
$0.691
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
378 mOhms
|
- 25 V, 25 V
|
2 V
|
17 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220 pack
- STP15N60M2-EP
- STMicroelectronics
-
1:
$2.62
-
1,962En existencias
-
NRND
|
N.º de artículo de Mouser
511-STP15N60M2-EP
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220 pack
|
|
1,962En existencias
|
|
|
$2.62
|
|
|
$1.36
|
|
|
$1.11
|
|
|
$0.997
|
|
|
Ver
|
|
|
$0.809
|
|
|
$0.806
|
|
|
$0.765
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
378 mOhms
|
- 25 V, 25 V
|
2 V
|
17 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra
- STFU26N60M2
- STMicroelectronics
-
1:
$3.55
-
922En existencias
|
N.º de artículo de Mouser
511-STFU26N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra
|
|
922En existencias
|
|
|
$3.55
|
|
|
$2.31
|
|
|
$1.77
|
|
|
$1.48
|
|
|
$1.29
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
165 mOhms
|
- 25 V, 25 V
|
2 V
|
34 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168 Ohm 17A Mdmesh II
- STB24NM60N
- STMicroelectronics
-
1:
$7.14
-
223En existencias
|
N.º de artículo de Mouser
511-STB24NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168 Ohm 17A Mdmesh II
|
|
223En existencias
|
|
|
$7.14
|
|
|
$4.82
|
|
|
$3.61
|
|
|
$3.31
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
17 A
|
168 mOhms
|
- 30 V, 30 V
|
3 V
|
46 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.28Ohm 11A Mdmesh II I2PAK
- STI13NM60N
- STMicroelectronics
-
1:
$2.70
-
913En existencias
|
N.º de artículo de Mouser
511-STI13NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.28Ohm 11A Mdmesh II I2PAK
|
|
913En existencias
|
|
|
$2.70
|
|
|
$1.73
|
|
|
$1.18
|
|
|
$0.979
|
|
|
$0.848
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-262-3
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
360 mOhms
|
- 25 V, 25 V
|
2 V
|
30 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 51 mOhm typ., 39 A MDmesh DM9 Power MOSFET
- ST8L60N065DM9
- STMicroelectronics
-
1:
$6.48
-
230En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-ST8L60N065DM9
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 51 mOhm typ., 39 A MDmesh DM9 Power MOSFET
|
|
230En existencias
|
|
|
$6.48
|
|
|
$4.44
|
|
|
$3.25
|
|
|
$3.07
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
|
600 V
|
39 A
|
65 mOhms
|
- 30 V, 30 V
|
4.5 V
|
66 nC
|
- 55 C
|
+ 150 C
|
202 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 36 mOhm typ., 58 A MDmesh M9 Power MOSFET
- ST8L65N044M9
- STMicroelectronics
-
1:
$7.70
-
222En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-ST8L65N044M9
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 36 mOhm typ., 58 A MDmesh M9 Power MOSFET
|
|
222En existencias
|
|
|
$7.70
|
|
|
$5.25
|
|
|
$4.01
|
|
|
$3.79
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
58 A
|
44 mOhms
|
30 V
|
4.2 V
|
110 nC
|
- 55 C
|
+ 150 C
|
166 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET
- STF80N240K6
- STMicroelectronics
-
1:
$5.94
-
1,017En existencias
-
1,000En pedido
-
Nuevo producto
|
N.º de artículo de Mouser
511-STF80N240K6
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET
|
|
1,017En existencias
1,000En pedido
|
|
|
$5.94
|
|
|
$4.49
|
|
|
$3.62
|
|
|
$3.22
|
|
|
$2.85
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
800 V
|
16 A
|
220 mOhms
|
- 30 V, 30 V
|
3.5 V
|
25.9 nC
|
- 55 C
|
+ 150 C
|
27 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220FP ultra na
- STFU28N65M2
- STMicroelectronics
-
1:
$3.86
-
1,634En existencias
|
N.º de artículo de Mouser
511-STFU28N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220FP ultra na
|
|
1,634En existencias
|
|
|
$3.86
|
|
|
$1.78
|
|
|
$1.65
|
|
|
$1.49
|
|
|
$1.48
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
20 A
|
180 mOhms
|
- 25 V, 25 V
|
2 V
|
35 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 400 Volt 5.4 A Zener SuperMESH
- STP7NK40Z
- STMicroelectronics
-
1:
$2.34
-
2,316En existencias
|
N.º de artículo de Mouser
511-STP7NK40Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 400 Volt 5.4 A Zener SuperMESH
|
|
2,316En existencias
|
|
|
$2.34
|
|
|
$0.846
|
|
|
$0.797
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
400 V
|
5.4 A
|
1 Ohms
|
- 30 V, 30 V
|
3 V
|
26 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
SuperMESH
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650 V, 38 mOhm typ., 51 A MDmesh DM9 Power MOSFET
- STH65N050DM9-7AG
- STMicroelectronics
-
1:
$9.00
-
995En existencias
-
1,000En pedido
-
Nuevo producto
|
N.º de artículo de Mouser
511-STH65N050DM9-7AG
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650 V, 38 mOhm typ., 51 A MDmesh DM9 Power MOSFET
|
|
995En existencias
1,000En pedido
|
|
|
$9.00
|
|
|
$6.17
|
|
|
$4.91
|
|
|
$4.59
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
51 A
|
50 mOhms
|
30 V
|
4.5 V
|
100 nC
|
- 50 C
|
+ 150 C
|
266 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-Channel 40V, 2.6mOhm max, 154A STripFET F8 Power MOSFET
- STL165N4F8AG
- STMicroelectronics
-
1:
$2.04
-
3,047En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-STL165N4F8AG
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-Channel 40V, 2.6mOhm max, 154A STripFET F8 Power MOSFET
|
|
3,047En existencias
|
|
|
$2.04
|
|
|
$1.31
|
|
|
$0.882
|
|
|
$0.701
|
|
|
$0.649
|
|
|
$0.618
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-4
|
N-Channel
|
1 Channel
|
40 V
|
154 A
|
2.6 mOhms
|
- 20 V, 20 V
|
4 V
|
28 nC
|
- 55 C
|
+ 175 C
|
111 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel Enhancement Mode 40V, 1.1mohm max, 290 STripFET F8 Power MOSFET
- STL300N4F8
- STMicroelectronics
-
1:
$2.59
-
5,946En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-STL300N4F8
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel Enhancement Mode 40V, 1.1mohm max, 290 STripFET F8 Power MOSFET
|
|
5,946En existencias
|
|
|
$2.59
|
|
|
$1.67
|
|
|
$1.15
|
|
|
$0.919
|
|
|
$0.891
|
|
|
$0.856
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
|
|
|
N-Channel
|
|
|
290 A
|
1.1 mOhms
|
|
|
|
|
|
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 0.85 mOhm max., 545 A STripFET F7 Power MOSFET
- STO450N6F7
- STMicroelectronics
-
1:
$5.79
-
1,795En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-STO450N6F7
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 0.85 mOhm max., 545 A STripFET F7 Power MOSFET
|
|
1,795En existencias
|
|
|
$5.79
|
|
|
$4.24
|
|
|
$3.07
|
|
|
$3.06
|
|
|
$2.86
|
|
|
$2.86
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
Si
|
SMD/SMT
|
TO-LL-8
|
N-Channel
|
1 Channel
|
60 V
|
545 A
|
850 mOhms
|
- 20 V, 20 V
|
4 V
|
300 nC
|
- 55 C
|
+ 175 C
|
454 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 620V-1.1ohms 5.5A
- STF6N62K3
- STMicroelectronics
-
1:
$2.55
-
1,671En existencias
|
N.º de artículo de Mouser
511-STF6N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 620V-1.1ohms 5.5A
|
|
1,671En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
620 V
|
5.5 A
|
1.28 Ohms
|
- 30 V, 30 V
|
3.75 V
|
34 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
