|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in
- STD12N60DM2AG
- STMicroelectronics
-
1:
$3.18
-
2,500En existencias
|
N.º de artículo de Mouser
511-STD12N60DM2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in
|
|
2,500En existencias
|
|
|
$3.18
|
|
|
$2.07
|
|
|
$1.43
|
|
|
$1.21
|
|
|
$1.11
|
|
|
$1.10
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
10 A
|
440 mOhms
|
- 25 V, 25 V
|
3 V
|
14.5 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
AEC-Q101
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in D2PAK package
- STB23N80K5
- STMicroelectronics
-
1:
$5.45
-
1,951En existencias
|
N.º de artículo de Mouser
511-STB23N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in D2PAK package
|
|
1,951En existencias
|
|
|
$5.45
|
|
|
$3.81
|
|
|
$2.74
|
|
|
$2.67
|
|
|
$2.49
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
800 V
|
16 A
|
280 mOhms
|
- 30 V, 30 V
|
4 V
|
33 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168Ohm 18A MDmesh M2
- STB24N60M2
- STMicroelectronics
-
1:
$3.54
-
2,428En existencias
|
N.º de artículo de Mouser
511-STB24N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168Ohm 18A MDmesh M2
|
|
2,428En existencias
|
|
|
$3.54
|
|
|
$2.12
|
|
|
$1.60
|
|
|
$1.41
|
|
|
$1.32
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
190 mOhms
|
- 25 V, 25 V
|
4 V
|
29 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a D2PAK package
- STB24N60M6
- STMicroelectronics
-
1:
$3.52
-
1,580En existencias
|
N.º de artículo de Mouser
511-STB24N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a D2PAK package
|
|
1,580En existencias
|
|
|
$3.52
|
|
|
$2.31
|
|
|
$1.61
|
|
|
$1.40
|
|
|
$1.39
|
|
|
$1.31
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
22 A
|
190 mOhms
|
- 25 V, 25 V
|
3.25 V
|
23 nC
|
- 55 C
|
+ 150 C
|
130 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel 40V Pwr Mosfet
- STB270N4F3
- STMicroelectronics
-
1:
$4.63
-
1,947En existencias
-
2,000En pedido
|
N.º de artículo de Mouser
511-STB270N4F3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel 40V Pwr Mosfet
|
|
1,947En existencias
2,000En pedido
|
|
|
$4.63
|
|
|
$3.07
|
|
|
$2.18
|
|
|
$2.02
|
|
|
$1.89
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
40 V
|
160 A
|
2 mOhms
|
- 20 V, 20 V
|
2 V
|
150 nC
|
- 55 C
|
+ 175 C
|
330 W
|
Enhancement
|
AEC-Q100
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in D2PAK package
- STB33N65M2
- STMicroelectronics
-
1:
$5.05
-
4,481En existencias
|
N.º de artículo de Mouser
511-STB33N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in D2PAK package
|
|
4,481En existencias
|
|
|
$5.05
|
|
|
$3.36
|
|
|
$2.40
|
|
|
$2.28
|
|
|
$2.10
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
24 A
|
140 mOhms
|
- 20 V, 20 V
|
2 V
|
41.5 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
- STB45N65M5
- STMicroelectronics
-
1:
$8.49
-
1,755En existencias
|
N.º de artículo de Mouser
511-STB45N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
|
|
1,755En existencias
|
|
|
$8.49
|
|
|
$5.84
|
|
|
$4.59
|
|
|
$4.29
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
35 A
|
78 mOhms
|
- 25 V, 25 V
|
3 V
|
82 nC
|
- 55 C
|
+ 150 C
|
210 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a D2PAK package
- STB8N90K5
- STMicroelectronics
-
1:
$4.09
-
1,163En existencias
|
N.º de artículo de Mouser
511-STB8N90K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a D2PAK package
|
|
1,163En existencias
|
|
|
$4.09
|
|
|
$2.69
|
|
|
$1.90
|
|
|
$1.71
|
|
|
$1.60
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
900 V
|
8 A
|
600 mOhms
|
- 30 V, 30 V
|
3 V
|
11 nC
|
- 55 C
|
+ 150 C
|
130 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.32Ohm 11A MDmesh II Plus
- STD13NM60ND
- STMicroelectronics
-
1:
$5.05
-
4,060En existencias
|
N.º de artículo de Mouser
511-STD13NM60ND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.32Ohm 11A MDmesh II Plus
|
|
4,060En existencias
|
|
|
$5.05
|
|
|
$2.30
|
|
|
$2.19
|
|
|
$2.19
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
380 mOhms
|
- 25 V, 25 V
|
4 V
|
24.5 nC
|
- 55 C
|
+ 150 C
|
109 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 620V, 2.7A SuperMESH Mosfet
- STD3N62K3
- STMicroelectronics
-
1:
$1.55
-
7,920En existencias
|
N.º de artículo de Mouser
511-STD3N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 620V, 2.7A SuperMESH Mosfet
|
|
7,920En existencias
|
|
|
$1.55
|
|
|
$0.696
|
|
|
$0.535
|
|
|
$0.469
|
|
|
$0.443
|
|
|
$0.424
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
620 V
|
2.7 A
|
2.5 Ohms
|
- 30 V, 30 V
|
3 V
|
13 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 525 V 4.4 A DPAK TO-220F
- STD5N52U
- STMicroelectronics
-
1:
$1.70
-
3,202En existencias
-
5,000En pedido
|
N.º de artículo de Mouser
511-STD5N52U
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 525 V 4.4 A DPAK TO-220F
|
|
3,202En existencias
5,000En pedido
|
|
|
$1.70
|
|
|
$1.08
|
|
|
$0.72
|
|
|
$0.568
|
|
|
$0.519
|
|
|
$0.478
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
525 V
|
4.4 A
|
1.28 Ohms
|
- 30 V, 30 V
|
3 V
|
16.9 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
UltraFASTmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 400 Volt 3 Amp Zener SuperMESH
- STD5NK40ZT4
- STMicroelectronics
-
1:
$1.99
-
3,605En existencias
|
N.º de artículo de Mouser
511-STD5NK40Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 400 Volt 3 Amp Zener SuperMESH
|
|
3,605En existencias
|
|
|
$1.99
|
|
|
$1.27
|
|
|
$0.856
|
|
|
$0.679
|
|
|
$0.626
|
|
|
$0.595
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
400 V
|
3 A
|
1.8 Ohms
|
- 30 V, 30 V
|
3 V
|
17 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
|
SuperMESH
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 500 V, 700 mOhm typ., 7.5 A MDmesh Power MOSFET in a
- STD5NM50AG
- STMicroelectronics
-
1:
$2.51
-
5,579En existencias
|
N.º de artículo de Mouser
511-STD5NM50AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 500 V, 700 mOhm typ., 7.5 A MDmesh Power MOSFET in a
|
|
5,579En existencias
|
|
|
$2.51
|
|
|
$1.62
|
|
|
$1.11
|
|
|
$0.887
|
|
|
$0.879
|
|
|
$0.82
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
500 V
|
7.5 A
|
800 mOhms
|
- 30 V, 30 V
|
5 V
|
13 nC
|
- 55 C
|
+ 150 C
|
100 W
|
Enhancement
|
AEC-Q101
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSFET in a DPAK package
- STD7LN80K5
- STMicroelectronics
-
1:
$2.69
-
2,662En existencias
-
2,500En pedido
|
N.º de artículo de Mouser
511-STD7LN80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSFET in a DPAK package
|
|
2,662En existencias
2,500En pedido
|
|
|
$2.69
|
|
|
$1.74
|
|
|
$1.20
|
|
|
$0.965
|
|
|
$0.901
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
5 A
|
1.15 Ohms
|
- 30 V, 30 V
|
3 V
|
12 nC
|
- 55 C
|
+ 150 C
|
85 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 525 V 6.3 A DPAK
- STD7N52K3
- STMicroelectronics
-
1:
$2.27
-
4,840En existencias
|
N.º de artículo de Mouser
511-STD7N52K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 525 V 6.3 A DPAK
|
|
4,840En existencias
|
|
|
$2.27
|
|
|
$1.44
|
|
|
$0.959
|
|
|
$0.786
|
|
|
$0.696
|
|
|
$0.625
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
525 V
|
6 A
|
850 mOhms
|
- 30 V, 30 V
|
3 V
|
33 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 40V 5.4mOhm 80A
- STD95N4F3
- STMicroelectronics
-
1:
$2.25
-
3,063En existencias
|
N.º de artículo de Mouser
511-STD95N4F3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 40V 5.4mOhm 80A
|
|
3,063En existencias
|
|
|
$2.25
|
|
|
$1.45
|
|
|
$0.982
|
|
|
$0.784
|
|
|
$0.738
|
|
|
$0.702
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
40 V
|
80 A
|
5.8 mOhms
|
- 20 V, 20 V
|
4 V
|
40 nC
|
- 55 C
|
+ 175 C
|
110 W
|
Enhancement
|
AEC-Q100
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 900V 0.25 Ohm 18.5A MDmesh K5
- STF21N90K5
- STMicroelectronics
-
1:
$7.53
-
1,723En existencias
|
N.º de artículo de Mouser
511-STF21N90K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 900V 0.25 Ohm 18.5A MDmesh K5
|
|
1,723En existencias
|
|
|
$7.53
|
|
|
$3.88
|
|
|
$3.77
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
900 V
|
18.5 A
|
299 mOhms
|
- 30 V, 30 V
|
3 V
|
43 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 0.19 Ohm 19.5A MDmesh K5
- STF25N80K5
- STMicroelectronics
-
1:
$6.18
-
1,014En existencias
|
N.º de artículo de Mouser
511-STF25N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 0.19 Ohm 19.5A MDmesh K5
|
|
1,014En existencias
|
|
|
$6.18
|
|
|
$3.07
|
|
|
$2.88
|
|
|
$2.78
|
|
|
$2.66
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
19.5 A
|
260 mOhms
|
- 30 V, 30 V
|
4 V
|
40 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V 20 A Mdmesh
- STF26NM60N
- STMicroelectronics
-
1:
$6.03
-
1,993En existencias
|
N.º de artículo de Mouser
511-STF26NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V 20 A Mdmesh
|
|
1,993En existencias
|
|
|
$6.03
|
|
|
$4.12
|
|
|
$3.70
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|
Min.: 1
Mult.: 1
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Si
|
Through Hole
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TO-220-3
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N-Channel
|
1 Channel
|
600 V
|
20 A
|
165 mOhms
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- 30 V, 30 V
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3 V
|
60 nC
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- 55 C
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+ 150 C
|
35 W
|
Enhancement
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MDmesh
|
Tube
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|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 24V 120A Zener SuperMESH
- STF3NK100Z
- STMicroelectronics
-
1:
$4.67
-
1,813En existencias
|
N.º de artículo de Mouser
511-STF3NK100Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 24V 120A Zener SuperMESH
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|
1,813En existencias
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|
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$4.67
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$2.50
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$2.28
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|
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$1.90
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Min.: 1
Mult.: 1
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|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
1 kV
|
2.5 A
|
6 Ohms
|
- 30 V, 30 V
|
3 V
|
18 nC
|
- 55 C
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+ 150 C
|
25 W
|
Enhancement
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SuperMESH
|
Tube
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|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Nchanl 600 V 78 Ohm typ 34 A Pwr MOSFET
- STF40N60M2
- STMicroelectronics
-
1:
$5.97
-
1,512En existencias
-
1,952En pedido
|
N.º de artículo de Mouser
511-STF40N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Nchanl 600 V 78 Ohm typ 34 A Pwr MOSFET
|
|
1,512En existencias
1,952En pedido
|
|
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$5.97
|
|
|
$3.16
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$2.88
|
|
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$2.69
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Min.: 1
Mult.: 1
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|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
34 A
|
88 mOhms
|
- 25 V, 25 V
|
3 V
|
57 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
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|
MDmesh
|
Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.290 Ohm typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 H
- STL18N65M2
- STMicroelectronics
-
1:
$3.26
-
3,751En existencias
|
N.º de artículo de Mouser
511-STL18N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.290 Ohm typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 H
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3,751En existencias
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$3.26
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$2.12
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|
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$1.49
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$1.27
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|
|
$1.13
|
|
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$1.13
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|
Min.: 1
Mult.: 1
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|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
650 V
|
8 A
|
290 mOhms
|
- 25 V, 25 V
|
2 V
|
21.5 nC
|
- 55 C
|
+ 150 C
|
57 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.186Ohm typ. 18A MDmesh M2
- STL24N60M2
- STMicroelectronics
-
1:
$3.81
-
6,000En existencias
|
N.º de artículo de Mouser
511-STL24N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.186Ohm typ. 18A MDmesh M2
|
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6,000En existencias
|
|
|
$3.81
|
|
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$2.50
|
|
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$1.75
|
|
|
$1.56
|
|
|
$1.47
|
|
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$1.45
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-5
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
186 mOhms
|
- 25 V, 25 V
|
3 V
|
29 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
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|
MDmesh
|
Reel, Cut Tape, MouseReel
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 10 Amp Zener SuperMESH
- STP10NK60Z
- STMicroelectronics
-
1:
$3.68
-
3,070En existencias
|
N.º de artículo de Mouser
511-STP10NK60Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 10 Amp Zener SuperMESH
|
|
3,070En existencias
|
|
|
$3.68
|
|
|
$2.11
|
|
|
$1.96
|
|
|
$1.73
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
10 A
|
750 mOhms
|
- 30 V, 30 V
|
3 V
|
70 nC
|
- 55 C
|
+ 150 C
|
115 W
|
Enhancement
|
|
SuperMESH
|
Tube
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|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 9 Amp Zener SuperMESH
- STP10NK80Z
- STMicroelectronics
-
1:
$4.89
-
2,157En existencias
|
N.º de artículo de Mouser
511-STP10NK80Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 9 Amp Zener SuperMESH
|
|
2,157En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
9 A
|
900 mOhms
|
- 30 V, 30 V
|
3 V
|
72 nC
|
- 55 C
|
+ 150 C
|
160 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|