|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 100 V, 0.005 Ohm typ., 107 A STripFET F7 Power MOSFET
- STL115N10F7AG
- STMicroelectronics
-
1:
$3.20
-
3,756En existencias
-
2,862En pedido
|
N.º de artículo de Mouser
511-STL115N10F7AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 100 V, 0.005 Ohm typ., 107 A STripFET F7 Power MOSFET
|
|
3,756En existencias
2,862En pedido
|
|
|
$3.20
|
|
|
$2.09
|
|
|
$1.45
|
|
|
$1.24
|
|
|
$1.18
|
|
|
$1.15
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-8
|
N-Channel
|
1 Channel
|
100 V
|
107 A
|
5 mOhms
|
- 20 V, 20 V
|
2.5 V
|
72.5 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
AEC-Q101
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.475 Ohm typ., 8.5 A MDmesh M5 Power MOSFET in a PowerFLAT 5x5
- STL11N65M5
- STMicroelectronics
-
1:
$2.89
-
2,059En existencias
|
N.º de artículo de Mouser
511-STL11N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.475 Ohm typ., 8.5 A MDmesh M5 Power MOSFET in a PowerFLAT 5x5
|
|
2,059En existencias
|
|
|
$2.89
|
|
|
$1.87
|
|
|
$1.29
|
|
|
$1.07
|
|
|
$1.02
|
|
|
$0.994
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x5-12
|
N-Channel
|
1 Channel
|
650 V
|
8.5 A
|
530 mOhms
|
- 25 V, 25 V
|
4 V
|
17 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 80V 4 mOhm 24A STripFET VII
- STL130N8F7
- STMicroelectronics
-
1:
$2.76
-
7,064En existencias
|
N.º de artículo de Mouser
511-STL130N8F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 80V 4 mOhm 24A STripFET VII
|
|
7,064En existencias
|
|
|
$2.76
|
|
|
$2.07
|
|
|
$1.58
|
|
|
$1.37
|
|
|
$1.28
|
|
|
$1.28
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
80 V
|
120 A
|
3.6 mOhms
|
- 20 V, 20 V
|
2.5 V
|
96 nC
|
- 55 C
|
+ 175 C
|
135 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.29 Ohm typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV
- STL16N60M2
- STMicroelectronics
-
1:
$3.02
-
3,116En existencias
|
N.º de artículo de Mouser
511-STL16N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.29 Ohm typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV
|
|
3,116En existencias
|
|
|
$3.02
|
|
|
$1.96
|
|
|
$1.36
|
|
|
$1.14
|
|
|
$1.13
|
|
|
$1.06
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
650 V
|
8 A
|
355 mOhms
|
- 25 V, 25 V
|
4 V
|
19 nC
|
- 55 C
|
+ 150 C
|
52 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.195 Ohm typ., 15 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8
- STL24N60DM2
- STMicroelectronics
-
1:
$4.10
-
7,622En existencias
|
N.º de artículo de Mouser
511-STL24N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.195 Ohm typ., 15 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8
|
|
7,622En existencias
|
|
|
$4.10
|
|
|
$2.70
|
|
|
$1.92
|
|
|
$1.59
|
|
|
$1.59
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-5
|
N-Channel
|
1 Channel
|
600 V
|
15 A
|
195 mOhms
|
- 25 V, 25 V
|
3 V
|
29 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 11 Amp Power MDmesh
- STP11NM80
- STMicroelectronics
-
1:
$5.57
-
1,961En existencias
|
N.º de artículo de Mouser
511-STP11NM80
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 11 Amp Power MDmesh
|
|
1,961En existencias
|
|
|
$5.57
|
|
|
$3.41
|
|
|
$3.22
|
|
|
$3.21
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
11 A
|
400 mOhms
|
- 30 V, 30 V
|
3 V
|
43.6 nC
|
- 65 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 14 Amp Zener SuperMESH
- STP14NK50Z
- STMicroelectronics
-
1:
$5.15
-
671En existencias
|
N.º de artículo de Mouser
511-STP14NK50Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 14 Amp Zener SuperMESH
|
|
671En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
14 A
|
380 mOhms
|
- 30 V, 30 V
|
3 V
|
69 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 600V-0.45ohms 13.5A
- STP14NK60ZFP
- STMicroelectronics
-
1:
$4.93
-
761En existencias
|
N.º de artículo de Mouser
511-STP14NK60ZFP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 600V-0.45ohms 13.5A
|
|
761En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
13.5 A
|
500 mOhms
|
- 30 V, 30 V
|
3 V
|
75 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 950V 0.41Ohm typ. 12A MDmesh K5
- STP15N95K5
- STMicroelectronics
-
1:
$4.88
-
884En existencias
|
N.º de artículo de Mouser
511-STP15N95K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 950V 0.41Ohm typ. 12A MDmesh K5
|
|
884En existencias
|
|
|
$4.88
|
|
|
$3.21
|
|
|
$2.51
|
|
|
$2.23
|
|
|
$1.97
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
950 V
|
12 A
|
410 mOhms
|
- 30 V, 30 V
|
4 V
|
40 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a TO-220 package
- STP20N90K5
- STMicroelectronics
-
1:
$5.82
-
1,624En existencias
|
N.º de artículo de Mouser
511-STP20N90K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a TO-220 package
|
|
1,624En existencias
|
|
|
$5.82
|
|
|
$4.08
|
|
|
$3.89
|
|
|
$3.66
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
900 V
|
20 A
|
210 mOhms
|
- 30 V, 30 V
|
3 V
|
40 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 900V 0.25 Ohm 18.5A MDmesh K5
- STP21N90K5
- STMicroelectronics
-
1:
$7.33
-
1,395En existencias
|
N.º de artículo de Mouser
511-STP21N90K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 900V 0.25 Ohm 18.5A MDmesh K5
|
|
1,395En existencias
|
|
|
$7.33
|
|
|
$3.97
|
|
|
$3.64
|
|
|
$3.34
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
900 V
|
18.5 A
|
299 mOhms
|
- 30 V, 30 V
|
3 V
|
43 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.078Ohm typ. 34A MDmesh M2
- STP40N60M2
- STMicroelectronics
-
1:
$5.31
-
995En existencias
|
N.º de artículo de Mouser
511-STP40N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.078Ohm typ. 34A MDmesh M2
|
|
995En existencias
|
|
|
$5.31
|
|
|
$3.03
|
|
|
$2.76
|
|
|
$2.52
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
34 A
|
88 mOhms
|
- 25 V, 25 V
|
3 V
|
57 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 3.0 A Zener SuperMESH
- STP4NK80Z
- STMicroelectronics
-
1:
$2.75
-
2,100En existencias
|
N.º de artículo de Mouser
511-STP4NK80Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 3.0 A Zener SuperMESH
|
|
2,100En existencias
|
|
|
$2.75
|
|
|
$1.12
|
|
|
$1.02
|
|
|
$0.929
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
3 A
|
3.5 Ohms
|
- 30 V, 30 V
|
3 V
|
22.5 nC
|
- 55 C
|
+ 150 C
|
80 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 800V 13 Ohm 1A
- STQ1NK80ZR-AP
- STMicroelectronics
-
1:
$1.27
-
4,992En existencias
|
N.º de artículo de Mouser
511-STQ1NK80ZR-AP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 800V 13 Ohm 1A
|
|
4,992En existencias
|
|
|
$1.27
|
|
|
$0.795
|
|
|
$0.525
|
|
|
$0.409
|
|
|
$0.339
|
|
|
Ver
|
|
|
$0.371
|
|
|
$0.317
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
Through Hole
|
TO-92-3
|
N-Channel
|
1 Channel
|
800 V
|
300 mA
|
16 Ohms
|
- 30 V, 30 V
|
3 V
|
7.7 nC
|
- 55 C
|
+ 150 C
|
3 W
|
Enhancement
|
|
|
Ammo Pack
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 60 mOhm typ., 46 A MDmesh DM6 Power MOSFET
- STW65N60DM6
- STMicroelectronics
-
1:
$7.81
-
508En existencias
|
N.º de artículo de Mouser
511-STW65N60DM6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 60 mOhm typ., 46 A MDmesh DM6 Power MOSFET
|
|
508En existencias
|
|
|
$7.81
|
|
|
$5.33
|
|
|
$3.91
|
|
|
$3.83
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
38 A
|
71 mOhms
|
- 25 V, 25 V
|
3.25 V
|
54 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in D2PAK package
- STB23N80K5
- STMicroelectronics
-
1:
$5.45
-
1,951En existencias
|
N.º de artículo de Mouser
511-STB23N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in D2PAK package
|
|
1,951En existencias
|
|
|
$5.45
|
|
|
$3.81
|
|
|
$2.74
|
|
|
$2.67
|
|
|
$2.49
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
800 V
|
16 A
|
280 mOhms
|
- 30 V, 30 V
|
4 V
|
33 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168Ohm 18A MDmesh M2
- STB24N60M2
- STMicroelectronics
-
1:
$3.54
-
2,428En existencias
|
N.º de artículo de Mouser
511-STB24N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168Ohm 18A MDmesh M2
|
|
2,428En existencias
|
|
|
$3.54
|
|
|
$2.12
|
|
|
$1.60
|
|
|
$1.41
|
|
|
$1.32
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
190 mOhms
|
- 25 V, 25 V
|
4 V
|
29 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a D2PAK package
- STB24N60M6
- STMicroelectronics
-
1:
$3.52
-
1,580En existencias
|
N.º de artículo de Mouser
511-STB24N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a D2PAK package
|
|
1,580En existencias
|
|
|
$3.52
|
|
|
$2.31
|
|
|
$1.61
|
|
|
$1.40
|
|
|
$1.39
|
|
|
$1.31
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
22 A
|
190 mOhms
|
- 25 V, 25 V
|
3.25 V
|
23 nC
|
- 55 C
|
+ 150 C
|
130 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel 40V Pwr Mosfet
- STB270N4F3
- STMicroelectronics
-
1:
$4.63
-
1,947En existencias
-
2,000En pedido
|
N.º de artículo de Mouser
511-STB270N4F3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel 40V Pwr Mosfet
|
|
1,947En existencias
2,000En pedido
|
|
|
$4.63
|
|
|
$3.06
|
|
|
$2.17
|
|
|
$2.02
|
|
|
$1.89
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
40 V
|
160 A
|
2 mOhms
|
- 20 V, 20 V
|
2 V
|
150 nC
|
- 55 C
|
+ 175 C
|
330 W
|
Enhancement
|
AEC-Q100
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in D2PAK package
- STB33N65M2
- STMicroelectronics
-
1:
$5.05
-
4,481En existencias
|
N.º de artículo de Mouser
511-STB33N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in D2PAK package
|
|
4,481En existencias
|
|
|
$5.05
|
|
|
$3.36
|
|
|
$2.40
|
|
|
$2.28
|
|
|
$2.10
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
24 A
|
140 mOhms
|
- 20 V, 20 V
|
2 V
|
41.5 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
- STB45N65M5
- STMicroelectronics
-
1:
$8.49
-
1,755En existencias
|
N.º de artículo de Mouser
511-STB45N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
|
|
1,755En existencias
|
|
|
$8.49
|
|
|
$5.84
|
|
|
$4.59
|
|
|
$4.29
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
35 A
|
78 mOhms
|
- 25 V, 25 V
|
3 V
|
82 nC
|
- 55 C
|
+ 150 C
|
210 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a D2PAK package
- STB8N90K5
- STMicroelectronics
-
1:
$4.09
-
1,163En existencias
|
N.º de artículo de Mouser
511-STB8N90K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a D2PAK package
|
|
1,163En existencias
|
|
|
$4.09
|
|
|
$2.69
|
|
|
$1.90
|
|
|
$1.71
|
|
|
$1.60
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
900 V
|
8 A
|
600 mOhms
|
- 30 V, 30 V
|
3 V
|
11 nC
|
- 55 C
|
+ 150 C
|
130 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.32Ohm 11A MDmesh II Plus
- STD13NM60ND
- STMicroelectronics
-
1:
$5.05
-
4,060En existencias
|
N.º de artículo de Mouser
511-STD13NM60ND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.32Ohm 11A MDmesh II Plus
|
|
4,060En existencias
|
|
|
$5.05
|
|
|
$2.30
|
|
|
$2.19
|
|
|
$2.19
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
380 mOhms
|
- 25 V, 25 V
|
4 V
|
24.5 nC
|
- 55 C
|
+ 150 C
|
109 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 620V, 2.7A SuperMESH Mosfet
- STD3N62K3
- STMicroelectronics
-
1:
$1.55
-
7,920En existencias
|
N.º de artículo de Mouser
511-STD3N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 620V, 2.7A SuperMESH Mosfet
|
|
7,920En existencias
|
|
|
$1.55
|
|
|
$0.696
|
|
|
$0.535
|
|
|
$0.469
|
|
|
$0.443
|
|
|
$0.424
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
620 V
|
2.7 A
|
2.5 Ohms
|
- 30 V, 30 V
|
3 V
|
13 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 525 V 4.4 A DPAK TO-220F
- STD5N52U
- STMicroelectronics
-
1:
$1.70
-
3,162En existencias
-
5,000En pedido
|
N.º de artículo de Mouser
511-STD5N52U
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 525 V 4.4 A DPAK TO-220F
|
|
3,162En existencias
5,000En pedido
|
|
|
$1.70
|
|
|
$1.08
|
|
|
$0.72
|
|
|
$0.568
|
|
|
$0.519
|
|
|
$0.478
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
525 V
|
4.4 A
|
1.28 Ohms
|
- 30 V, 30 V
|
3 V
|
16.9 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
UltraFASTmesh
|
Reel, Cut Tape, MouseReel
|
|