|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 950V 0.41Ohm typ. 12A MDmesh K5
- STP15N95K5
- STMicroelectronics
-
1:
$4.88
-
884En existencias
|
N.º de artículo de Mouser
511-STP15N95K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 950V 0.41Ohm typ. 12A MDmesh K5
|
|
884En existencias
|
|
|
$4.88
|
|
|
$3.21
|
|
|
$2.51
|
|
|
$2.23
|
|
|
$1.97
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
950 V
|
12 A
|
410 mOhms
|
- 30 V, 30 V
|
4 V
|
40 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a TO-220 package
- STP20N90K5
- STMicroelectronics
-
1:
$5.82
-
1,624En existencias
|
N.º de artículo de Mouser
511-STP20N90K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a TO-220 package
|
|
1,624En existencias
|
|
|
$5.82
|
|
|
$4.08
|
|
|
$3.89
|
|
|
$3.66
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
900 V
|
20 A
|
210 mOhms
|
- 30 V, 30 V
|
3 V
|
40 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 900V 0.25 Ohm 18.5A MDmesh K5
- STP21N90K5
- STMicroelectronics
-
1:
$7.33
-
1,395En existencias
|
N.º de artículo de Mouser
511-STP21N90K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 900V 0.25 Ohm 18.5A MDmesh K5
|
|
1,395En existencias
|
|
|
$7.33
|
|
|
$3.97
|
|
|
$3.64
|
|
|
$3.34
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
900 V
|
18.5 A
|
299 mOhms
|
- 30 V, 30 V
|
3 V
|
43 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.078Ohm typ. 34A MDmesh M2
- STP40N60M2
- STMicroelectronics
-
1:
$5.31
-
995En existencias
|
N.º de artículo de Mouser
511-STP40N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.078Ohm typ. 34A MDmesh M2
|
|
995En existencias
|
|
|
$5.31
|
|
|
$3.03
|
|
|
$2.76
|
|
|
$2.52
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
34 A
|
88 mOhms
|
- 25 V, 25 V
|
3 V
|
57 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 3.0 A Zener SuperMESH
- STP4NK80Z
- STMicroelectronics
-
1:
$2.75
-
2,100En existencias
|
N.º de artículo de Mouser
511-STP4NK80Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 3.0 A Zener SuperMESH
|
|
2,100En existencias
|
|
|
$2.75
|
|
|
$1.12
|
|
|
$1.02
|
|
|
$0.929
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
3 A
|
3.5 Ohms
|
- 30 V, 30 V
|
3 V
|
22.5 nC
|
- 55 C
|
+ 150 C
|
80 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 800V 13 Ohm 1A
- STQ1NK80ZR-AP
- STMicroelectronics
-
1:
$1.27
-
4,992En existencias
|
N.º de artículo de Mouser
511-STQ1NK80ZR-AP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 800V 13 Ohm 1A
|
|
4,992En existencias
|
|
|
$1.27
|
|
|
$0.795
|
|
|
$0.525
|
|
|
$0.409
|
|
|
$0.339
|
|
|
Ver
|
|
|
$0.371
|
|
|
$0.317
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-92-3
|
N-Channel
|
1 Channel
|
800 V
|
300 mA
|
16 Ohms
|
- 30 V, 30 V
|
3 V
|
7.7 nC
|
- 55 C
|
+ 150 C
|
3 W
|
Enhancement
|
|
|
Ammo Pack
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 60 mOhm typ., 46 A MDmesh DM6 Power MOSFET
- STW65N60DM6
- STMicroelectronics
-
1:
$7.81
-
508En existencias
|
N.º de artículo de Mouser
511-STW65N60DM6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 60 mOhm typ., 46 A MDmesh DM6 Power MOSFET
|
|
508En existencias
|
|
|
$7.81
|
|
|
$5.33
|
|
|
$3.91
|
|
|
$3.83
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
38 A
|
71 mOhms
|
- 25 V, 25 V
|
3.25 V
|
54 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 11 Amp
- STP11NM60FDFP
- STMicroelectronics
-
1:
$3.97
-
537En existencias
-
NRND
|
N.º de artículo de Mouser
511-STP11NM60FDFP
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 11 Amp
|
|
537En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
450 mOhms
|
- 30 V, 30 V
|
3 V
|
40 nC
|
- 65 C
|
+ 150 C
|
35 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 0.032Ohm 30A N-Channel
- STB36NF06LT4
- STMicroelectronics
-
1:
$2.12
-
1,373En existencias
|
N.º de artículo de Mouser
511-STB36NF06LT4
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 0.032Ohm 30A N-Channel
|
|
1,373En existencias
|
|
|
$2.12
|
|
|
$1.36
|
|
|
$0.917
|
|
|
$0.731
|
|
|
$0.65
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
60 V
|
30 A
|
40 mOhms
|
- 18 V, 18 V
|
1 V
|
17 nC
|
- 55 C
|
+ 175 C
|
70 W
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 0.062 Ohm typ., 4.5 A STripFET F7 Power MOSFET in a PowerFLAT 3
- STL4N10F7
- STMicroelectronics
-
1:
$0.98
-
823En existencias
|
N.º de artículo de Mouser
511-STL4N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 0.062 Ohm typ., 4.5 A STripFET F7 Power MOSFET in a PowerFLAT 3
|
|
823En existencias
|
|
|
$0.98
|
|
|
$0.611
|
|
|
$0.398
|
|
|
$0.307
|
|
|
$0.271
|
|
|
$0.233
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-3.3x3.3-8
|
N-Channel
|
1 Channel
|
100 V
|
4.5 A
|
70 mOhms
|
- 20 V, 20 V
|
4.5 V
|
7.8 nC
|
- 55 C
|
+ 150 C
|
2.9 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in
- STH410N4F7-6AG
- STMicroelectronics
-
1:
$5.60
-
736En existencias
|
N.º de artículo de Mouser
511-STH410N4F7-6AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in
|
|
736En existencias
|
|
|
$5.60
|
|
|
$3.74
|
|
|
$3.02
|
|
|
$2.69
|
|
|
$2.37
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
H2PAK-6
|
N-Channel
|
1 Channel
|
40 V
|
200 A
|
1.1 mOhms
|
- 20 V, 20 V
|
4 V
|
120 nC
|
- 55 C
|
+ 150 C
|
365 W
|
Enhancement
|
AEC-Q101
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 0.00275 Ohm 32A STripFET V 40V
- STL140N4LLF5
- STMicroelectronics
-
1:
$3.31
-
2,158En existencias
|
N.º de artículo de Mouser
511-STL140N4LLF5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 0.00275 Ohm 32A STripFET V 40V
|
|
2,158En existencias
|
|
|
$3.31
|
|
|
$2.15
|
|
|
$1.58
|
|
|
$1.32
|
|
|
$1.25
|
|
|
$1.15
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
40 V
|
140 A
|
2.75 Ohms
|
- 22 V, 22 V
|
1 V
|
45 nC
|
- 55 C
|
+ 150 C
|
80 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
- STU6N65M2
- STMicroelectronics
-
1:
$1.61
-
45En existencias
|
N.º de artículo de Mouser
511-STU6N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
|
|
45En existencias
|
|
|
$1.61
|
|
|
$0.835
|
|
|
$0.622
|
|
|
$0.518
|
|
|
Ver
|
|
|
$0.437
|
|
|
$0.431
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
650 V
|
4 A
|
1.35 Ohms
|
- 25 V, 25 V
|
3 V
|
9.8 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.59 Ohm typ., 6 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VH
- STL10LN80K5
- STMicroelectronics
-
1:
$4.01
-
923En existencias
|
N.º de artículo de Mouser
511-STL10LN80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.59 Ohm typ., 6 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VH
|
|
923En existencias
|
|
|
$4.01
|
|
|
$2.63
|
|
|
$1.94
|
|
|
$1.72
|
|
|
$1.52
|
|
|
$1.52
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-VHV-8
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
660 mOhms
|
- 30 V, 30 V
|
5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
42 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel, 40 V, 7.0 mOhm typ., 40 A, STripFET F7 Power M
- STL64DN4F7AG
- STMicroelectronics
-
1:
$2.16
-
579En existencias
|
N.º de artículo de Mouser
511-STL64DN4F7AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel, 40 V, 7.0 mOhm typ., 40 A, STripFET F7 Power M
|
|
579En existencias
|
|
|
$2.16
|
|
|
$1.39
|
|
|
$0.957
|
|
|
$0.811
|
|
|
$0.678
|
|
|
$0.645
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q101
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 380 mOhm typ., 10 A MDmesh DM2 Power MOSFET in
- STB12N60DM2AG
- STMicroelectronics
-
1:
$3.38
-
204En existencias
|
N.º de artículo de Mouser
511-STB12N60DM2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 380 mOhm typ., 10 A MDmesh DM2 Power MOSFET in
|
|
204En existencias
|
|
|
$3.38
|
|
|
$2.20
|
|
|
$1.69
|
|
|
$1.41
|
|
|
$1.22
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
10 A
|
430 mOhms
|
|
5 V
|
14.5 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
AEC-Q101
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package
- STP16N65M2
- STMicroelectronics
-
1:
$2.84
-
251En existencias
|
N.º de artículo de Mouser
511-STP16N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package
|
|
251En existencias
|
|
|
$2.84
|
|
|
$1.83
|
|
|
$1.31
|
|
|
$1.08
|
|
|
$0.948
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
360 mOhms
|
- 25 V, 25 V
|
3 V
|
19.5 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.092Ohm 29A MDMesh II MOS
- STB34NM60N
- STMicroelectronics
-
1:
$10.55
-
970En existencias
|
N.º de artículo de Mouser
511-STB34NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.092Ohm 29A MDMesh II MOS
|
|
970En existencias
|
|
|
$10.55
|
|
|
$7.36
|
|
|
$6.12
|
|
|
$6.11
|
|
|
$5.72
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
29 A
|
92 mOhms
|
- 25 V, 25 V
|
2 V
|
84 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 450V-4.1ohms 1.5A
- STD2NC45-1
- STMicroelectronics
-
1:
$0.49
-
5,394En existencias
|
N.º de artículo de Mouser
511-STD2NC45-1
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 450V-4.1ohms 1.5A
|
|
5,394En existencias
|
|
|
$0.49
|
|
|
$0.482
|
|
|
$0.478
|
|
|
$0.426
|
|
|
Ver
|
|
|
$0.376
|
|
|
$0.267
|
|
|
$0.262
|
|
|
$0.257
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
450 V
|
1.5 A
|
4.5 Ohms
|
- 30 V, 30 V
|
2.3 V
|
7 nC
|
- 65 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 525 V 4.4 A SuperMESH3
- STD5N52K3
- STMicroelectronics
-
1:
$1.87
-
1,401En existencias
|
N.º de artículo de Mouser
511-STD5N52K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 525 V 4.4 A SuperMESH3
|
|
1,401En existencias
|
|
|
$1.87
|
|
|
$1.19
|
|
|
$0.803
|
|
|
$0.636
|
|
|
$0.588
|
|
|
$0.541
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
525 V
|
4.4 A
|
1.2 Ohms
|
- 30 V, 30 V
|
3 V
|
17 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 500V
- STF11NM50N
- STMicroelectronics
-
1:
$1.86
-
808En existencias
|
N.º de artículo de Mouser
511-STF11NM50N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 500V
|
|
808En existencias
|
|
|
$1.86
|
|
|
$1.51
|
|
|
$1.45
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
8.5 A
|
470 mOhms
|
- 25 V, 25 V
|
2 V
|
19 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in TO-220FP package
- STF12N60M2
- STMicroelectronics
-
1:
$1.93
-
2,071En existencias
|
N.º de artículo de Mouser
511-STF12N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in TO-220FP package
|
|
2,071En existencias
|
|
|
$1.93
|
|
|
$0.927
|
|
|
$0.826
|
|
|
$0.658
|
|
|
$0.538
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
450 mOhms
|
- 25 V, 25 V
|
4 V
|
16 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
MDmesh
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP packag
- STF24N60DM2
- STMicroelectronics
-
1:
$3.27
-
1,166En existencias
|
N.º de artículo de Mouser
511-STF24N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP packag
|
|
1,166En existencias
|
|
|
$3.27
|
|
|
$1.78
|
|
|
$1.57
|
|
|
$1.38
|
|
|
$1.22
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
175 mOhms
|
- 25 V, 25 V
|
3 V
|
29 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.135Ohm typ. 22A MDmesh M2
- STF28N60M2
- STMicroelectronics
-
1:
$3.66
-
782En existencias
|
N.º de artículo de Mouser
511-STF28N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.135Ohm typ. 22A MDmesh M2
|
|
782En existencias
|
|
|
$3.66
|
|
|
$1.79
|
|
|
$1.64
|
|
|
$1.47
|
|
|
$1.41
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
24 A
|
120 mOhms
|
- 25 V, 25 V
|
3 V
|
37 nC
|
- 55 C
|
+ 150 C
|
35 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.076 Ohm 30 A MDmesh M5
- STF38N65M5
- STMicroelectronics
-
1:
$6.47
-
Plazo de entrega no en existencias 16 Semanas
|
N.º de artículo de Mouser
511-STF38N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.076 Ohm 30 A MDmesh M5
|
|
Plazo de entrega no en existencias 16 Semanas
|
|
|
$6.47
|
|
|
$3.44
|
|
|
$3.15
|
|
|
$2.69
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
19 A
|
95 mOhms
|
- 25 V, 25 V
|
3 V
|
71 nC
|
- 55 C
|
+ 150 C
|
35 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|