|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a D2PAK package
- STB20N90K5
- STMicroelectronics
-
1:
$7.25
-
5,329En existencias
|
N.º de artículo de Mouser
511-STB20N90K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a D2PAK package
|
|
5,329En existencias
|
|
|
$7.25
|
|
|
$4.91
|
|
|
$3.69
|
|
|
$3.44
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
900 V
|
20 A
|
210 mOhms
|
- 30 V, 30 V
|
3 V
|
40 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) NCh 30V 0.0032Ohm 20A MOSFET
- STD17NF25
- STMicroelectronics
-
1:
$1.99
-
24,990En existencias
|
N.º de artículo de Mouser
511-STD17NF25
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) NCh 30V 0.0032Ohm 20A MOSFET
|
|
24,990En existencias
|
|
|
$1.99
|
|
|
$1.28
|
|
|
$0.86
|
|
|
$0.683
|
|
|
$0.629
|
|
|
$0.598
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
250 V
|
17 A
|
165 mOhms
|
- 20 V, 20 V
|
2 V
|
29.5 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package
- STD5N60M2
- STMicroelectronics
-
1:
$1.71
-
6,550En existencias
-
2,500En pedido
|
N.º de artículo de Mouser
511-STD5N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package
|
|
6,550En existencias
2,500En pedido
|
|
|
$1.71
|
|
|
$1.09
|
|
|
$0.724
|
|
|
$0.572
|
|
|
$0.52
|
|
|
$0.473
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
3.5 A
|
1.4 Ohms
|
- 25 V, 25 V
|
3 V
|
8.5 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 100V 2.1mOhm 180A STripFET VI
- STH310N10F7-2
- STMicroelectronics
-
1:
$5.80
-
8,169En existencias
|
N.º de artículo de Mouser
511-STH310N10F7-2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 100V 2.1mOhm 180A STripFET VI
|
|
8,169En existencias
|
|
|
$5.80
|
|
|
$4.01
|
|
|
$2.98
|
|
|
$2.88
|
|
|
$2.33
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
100 V
|
180 A
|
2.5 mOhms
|
- 20 V, 20 V
|
3.8 V
|
180 nC
|
- 55 C
|
+ 175 C
|
315 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.400 Ohm typ., 6.5 A MDmesh M2 Power MOSFET in PowerFLAT 5x6 H
- STL12N60M2
- STMicroelectronics
-
1:
$2.31
-
3,598En existencias
-
3,000En pedido
|
N.º de artículo de Mouser
511-STL12N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.400 Ohm typ., 6.5 A MDmesh M2 Power MOSFET in PowerFLAT 5x6 H
|
|
3,598En existencias
3,000En pedido
|
|
|
$2.31
|
|
|
$1.49
|
|
|
$1.01
|
|
|
$0.803
|
|
|
$0.771
|
|
|
$0.712
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
600 V
|
6.5 A
|
495 mOhms
|
- 25 V, 25 V
|
4 V
|
16 nC
|
- 55 C
|
+ 150 C
|
52 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 40 V, 1.3 m? typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6
- STL210N4F7
- STMicroelectronics
-
1:
$2.42
-
2,643En existencias
|
N.º de artículo de Mouser
511-STL210N4F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 40 V, 1.3 m? typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6
|
|
2,643En existencias
|
|
|
$2.42
|
|
|
$1.55
|
|
|
$1.05
|
|
|
$0.876
|
|
|
$0.771
|
|
|
$0.758
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Dual N-Ch 30V 11A 0.016 Ohm STripFET V
- STL40DN3LLH5
- STMicroelectronics
-
1:
$1.71
-
40,812En existencias
|
N.º de artículo de Mouser
511-STL40DN3LLH5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Dual N-Ch 30V 11A 0.016 Ohm STripFET V
|
|
40,812En existencias
|
|
|
$1.71
|
|
|
$1.09
|
|
|
$0.728
|
|
|
$0.574
|
|
|
$0.525
|
|
|
$0.484
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
2 Channel
|
30 V
|
40 A
|
16 mOhms
|
- 22 V, 22 V
|
1.5 V
|
4.5 nC
|
- 55 C
|
+ 175 C
|
60 W
|
Enhancement
|
AEC-Q100
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 100V 0.013Ohm 12A VII DeepGate
- STL60N10F7
- STMicroelectronics
-
1:
$1.87
-
27,477En existencias
|
N.º de artículo de Mouser
511-STL60N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 100V 0.013Ohm 12A VII DeepGate
|
|
27,477En existencias
|
|
|
$1.87
|
|
|
$1.20
|
|
|
$0.802
|
|
|
$0.635
|
|
|
$0.586
|
|
|
$0.539
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
100 V
|
12 A
|
16.5 mOhms
|
- 20 V, 20 V
|
3.5 V
|
25 nC
|
- 55 C
|
+ 175 C
|
5 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-channel 30 V, 0.024 Ohm typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 3.3
- STL6P3LLH6
- STMicroelectronics
-
1:
$1.61
-
32,485En existencias
|
N.º de artículo de Mouser
511-STL6P3LLH6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-channel 30 V, 0.024 Ohm typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 3.3
|
|
32,485En existencias
|
|
|
$1.61
|
|
|
$1.02
|
|
|
$0.679
|
|
|
$0.534
|
|
|
$0.488
|
|
|
$0.443
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-3.3x3.3-8
|
P-Channel
|
1 Channel
|
30 V
|
6 A
|
30 mOhms
|
- 20 V, 20 V
|
1 V
|
12 nC
|
- 55 C
|
+ 150 C
|
2.9 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 21 mOhm typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 2x2 pa
- STL7N6F7
- STMicroelectronics
-
1:
$0.83
-
101,998En existencias
|
N.º de artículo de Mouser
511-STL7N6F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 21 mOhm typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 2x2 pa
|
|
101,998En existencias
|
|
|
$0.83
|
|
|
$0.517
|
|
|
$0.335
|
|
|
$0.256
|
|
|
$0.198
|
|
|
Ver
|
|
|
$0.231
|
|
|
$0.182
|
|
|
$0.178
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-2x2-6
|
N-Channel
|
1 Channel
|
60 V
|
7 A
|
21 mOhms
|
- 20 V, 20 V
|
2 V
|
8 nC
|
- 55 C
|
+ 150 C
|
2.4 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 17 mOhm typ., 8 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3
- STL8N10F7
- STMicroelectronics
-
1:
$1.43
-
39,246En existencias
|
N.º de artículo de Mouser
511-STL8N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 17 mOhm typ., 8 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3
|
|
39,246En existencias
|
|
|
$1.43
|
|
|
$0.90
|
|
|
$0.598
|
|
|
$0.478
|
|
|
$0.478
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-3.3x3.3-8
|
N-Channel
|
1 Channel
|
100 V
|
35 A
|
17 mOhms
|
- 20 V, 20 V
|
2.5 V
|
25 nC
|
- 55 C
|
+ 150 C
|
50 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-channel -30 V, 12 mOhm typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3
- STL9P3LLH6
- STMicroelectronics
-
1:
$1.59
-
88,987En existencias
|
N.º de artículo de Mouser
511-STL9P3LLH6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-channel -30 V, 12 mOhm typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3
|
|
88,987En existencias
|
|
|
$1.59
|
|
|
$0.986
|
|
|
$0.67
|
|
|
$0.527
|
|
|
$0.481
|
|
|
$0.436
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-3.3x3.3-8
|
P-Channel
|
1 Channel
|
30 V
|
9 A
|
12 mOhms
|
- 20 V, 20 V
|
1 V
|
24 nC
|
- 55 C
|
+ 150 C
|
3 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 20 Amp
- STP20NM60FD
- STMicroelectronics
-
1:
$7.51
-
5,233En existencias
-
2,000En pedido
|
N.º de artículo de Mouser
511-STP20NM60FD
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 20 Amp
|
|
5,233En existencias
2,000En pedido
|
|
|
$7.51
|
|
|
$4.10
|
|
|
$3.76
|
|
|
$3.65
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
290 mOhms
|
- 30 V, 30 V
|
3 V
|
54 nC
|
- 65 C
|
+ 150 C
|
192 W
|
Enhancement
|
|
FDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
- STP45N65M5
- STMicroelectronics
-
1:
$7.90
-
3,908En existencias
|
N.º de artículo de Mouser
511-STP45N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
|
|
3,908En existencias
|
|
|
$7.90
|
|
|
$4.67
|
|
|
$4.29
|
|
|
$4.23
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
35 A
|
78 mOhms
|
- 25 V, 25 V
|
5 V
|
82 nC
|
- 55 C
|
+ 150 C
|
208 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.024 Ohm 84A MDMesh M5
- STW88N65M5
- STMicroelectronics
-
1:
$16.13
-
4,151En existencias
|
N.º de artículo de Mouser
511-STW88N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.024 Ohm 84A MDMesh M5
|
|
4,151En existencias
|
|
|
$16.13
|
|
|
$9.95
|
|
|
$9.80
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
84 A
|
29 mOhms
|
- 25 V, 25 V
|
3 V
|
204 nC
|
- 55 C
|
+ 150 C
|
450 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 3 Ohm 2.2A SuperMESH3
- STF2N62K3
- STMicroelectronics
-
1:
$2.32
-
1,841En existencias
|
N.º de artículo de Mouser
511-STF2N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 3 Ohm 2.2A SuperMESH3
|
|
1,841En existencias
|
|
|
$2.32
|
|
|
$0.772
|
|
|
$0.768
|
|
|
$0.767
|
|
|
$0.69
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
620 V
|
2.2 A
|
3.6 Ohms
|
- 30 V, 30 V
|
3 V
|
15 nC
|
- 55 C
|
+ 150 C
|
20 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP pa
- STF25N60M2-EP
- STMicroelectronics
-
1:
$3.36
-
841En existencias
|
N.º de artículo de Mouser
511-STF25N60M2-EP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP pa
|
|
841En existencias
|
|
|
$3.36
|
|
|
$1.83
|
|
|
$1.66
|
|
|
$1.35
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
188 mOhms
|
- 25 V, 25 V
|
2 V
|
29 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3
- STF4N62K3
- STMicroelectronics
-
1:
$2.95
-
963En existencias
|
N.º de artículo de Mouser
511-STF4N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3
|
|
963En existencias
|
|
|
$2.95
|
|
|
$1.09
|
|
|
$1.05
|
|
|
$1.02
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
620 V
|
3.8 A
|
2 Ohms
|
- 30 V, 30 V
|
3 V
|
22 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.4 Ohm typ 3.5 A MDmesh M6 Power MOSFET in an IPAK package
- STU3N65M6
- STMicroelectronics
-
1:
$1.85
-
2,440En existencias
-
NRND
|
N.º de artículo de Mouser
511-STU3N65M6
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.4 Ohm typ 3.5 A MDmesh M6 Power MOSFET in an IPAK package
|
|
2,440En existencias
|
|
|
$1.85
|
|
|
$1.18
|
|
|
$0.781
|
|
|
$0.64
|
|
|
Ver
|
|
|
$0.56
|
|
|
$0.515
|
|
|
$0.514
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
650 V
|
3.5 A
|
1.5 Ohms
|
- 25 V, 25 V
|
2.25 V
|
6 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 620 V 8.4 A TO-220 TO-22
- STF10N62K3
- STMicroelectronics
-
1:
$2.71
-
976En existencias
|
N.º de artículo de Mouser
511-STF10N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 620 V 8.4 A TO-220 TO-22
|
|
976En existencias
|
|
|
$2.71
|
|
|
$1.74
|
|
|
$1.18
|
|
|
$0.983
|
|
|
$0.851
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
620 V
|
8.4 A
|
680 mOhms
|
- 30 V, 30 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET
- STO36N60M6
- STMicroelectronics
-
1:
$6.03
-
482En existencias
|
N.º de artículo de Mouser
511-STO36N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET
|
|
482En existencias
|
|
|
$6.03
|
|
|
$4.04
|
|
|
$2.91
|
|
|
$2.88
|
|
|
$2.70
|
|
|
$2.70
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TO-LL-8
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
99 mOhms
|
- 25 V, 25 V
|
4.75 V
|
44.3 nC
|
- 55 C
|
+ 150 C
|
230 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-247 package
- STW35N60DM2
- STMicroelectronics
-
1:
$5.52
-
382En existencias
|
N.º de artículo de Mouser
511-STW35N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-247 package
|
|
382En existencias
|
|
|
$5.52
|
|
|
$3.13
|
|
|
$2.37
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
28 A
|
110 mOhms
|
- 25 V, 25 V
|
3 V
|
54 nC
|
- 55 C
|
+ 150 C
|
210 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 13 Amp Zener SuperMESH
- STB13NK60ZT4
- STMicroelectronics
-
1:
$4.73
-
710En existencias
|
N.º de artículo de Mouser
511-STB13NK60Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 13 Amp Zener SuperMESH
|
|
710En existencias
|
|
|
$4.73
|
|
|
$3.14
|
|
|
$2.23
|
|
|
$1.95
|
|
|
$1.95
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
550 mOhms
|
- 30 V, 30 V
|
3 V
|
92 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
SuperMESH
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 400V 2.7 Ohm 2A SuperMESH3
- STD3N40K3
- STMicroelectronics
-
1:
$2.19
-
1,698En existencias
-
Verificar estado con la fábrica
|
N.º de artículo de Mouser
511-STD3N40K3
Verificar estado con la fábrica
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 400V 2.7 Ohm 2A SuperMESH3
|
|
1,698En existencias
|
|
|
$2.19
|
|
|
$1.40
|
|
|
$0.969
|
|
|
$0.822
|
|
|
$0.686
|
|
|
$0.653
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
400 V
|
1.8 A
|
3.4 Ohms
|
- 30 V, 30 V
|
4.5 V
|
11 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
SuperMESH
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
- STF10NM60ND
- STMicroelectronics
-
1:
$2.63
-
946En existencias
-
NRND
|
N.º de artículo de Mouser
511-STF10NM60ND
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
|
|
946En existencias
|
|
|
$2.63
|
|
|
$1.32
|
|
|
$1.19
|
|
|
$1.10
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
8 A
|
600 mOhms
|
- 25 V, 25 V
|
3 V
|
20 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
|
Tube
|
|