|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel logic level 40 V, 1.0 mOhm max., 304 A, STripFET F8 Power MOSFET
- STL300N4LF8
- STMicroelectronics
-
1:
$2.58
-
2,767En existencias
|
N.º de artículo de Mouser
511-STL300N4LF8
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel logic level 40 V, 1.0 mOhm max., 304 A, STripFET F8 Power MOSFET
|
|
2,767En existencias
|
|
|
$2.58
|
|
|
$1.74
|
|
|
$1.19
|
|
|
$0.985
|
|
|
$0.932
|
|
|
$0.853
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-8
|
N-Channel
|
1 Channel
|
40 V
|
304 A
|
1 mOhms
|
- 20 V, 20 V
|
2 V
|
70 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-Channel 40 V, 0.85 mOhm max., 350A STripFET F8 Power MOSFET
- STL325N4F8AG
- STMicroelectronics
-
1:
$3.26
-
2,534En existencias
|
N.º de artículo de Mouser
511-STL325N4F8AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-Channel 40 V, 0.85 mOhm max., 350A STripFET F8 Power MOSFET
|
|
2,534En existencias
|
|
|
$3.26
|
|
|
$2.12
|
|
|
$1.48
|
|
|
$1.26
|
|
|
$1.21
|
|
|
$1.18
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-4
|
N-Channel
|
1 Channel
|
40 V
|
373 A
|
1.1 mOhms
|
- 16 V, 16 V
|
2 V
|
95 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V Logic Level, 0.55 mOhm STripFET F8 Power MOSFET
- STL325N4LF8AG
- STMicroelectronics
-
1:
$2.63
-
3,968En existencias
|
N.º de artículo de Mouser
511-STL325N4LF8AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V Logic Level, 0.55 mOhm STripFET F8 Power MOSFET
|
|
3,968En existencias
|
|
|
$2.63
|
|
|
$1.83
|
|
|
$1.39
|
|
|
$1.23
|
|
|
$1.20
|
|
|
$1.20
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
|
|
N-Channel
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q101
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET
- STW65N023M9-4
- STMicroelectronics
-
1:
$17.23
-
522En existencias
|
N.º de artículo de Mouser
511-STW65N023M9-4
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET
|
|
522En existencias
|
|
|
$17.23
|
|
|
$10.85
|
|
|
$10.84
|
|
|
$10.83
|
|
|
$9.86
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
95 A
|
23 mOhms
|
- 30 V, 30 V
|
4.2 V
|
230 nC
|
- 55 C
|
+ 150 C
|
463 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET
- STW65N045M9-4
- STMicroelectronics
-
1:
$9.73
-
580En existencias
|
N.º de artículo de Mouser
511-STW65N045M9-4
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET
|
|
580En existencias
|
|
|
$9.73
|
|
|
$5.81
|
|
|
$5.80
|
|
|
$5.23
|
|
|
$4.89
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
54 A
|
45 mOhms
|
- 30 V, 30 V
|
4.2 V
|
80 nC
|
- 55 C
|
+ 150 C
|
312 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET
- STWA65N023M9
- STMicroelectronics
-
1:
$14.64
-
344En existencias
|
N.º de artículo de Mouser
511-STWA65N023M9
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET
|
|
344En existencias
|
|
|
$14.64
|
|
|
$8.95
|
|
|
$8.49
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
|
95 A
|
|
- 30 V, 30 V
|
4.2 V
|
230 nC
|
- 55 C
|
+ 150 C
|
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET
- STWA65N045M9
- STMicroelectronics
-
1:
$9.53
-
1,195En existencias
-
1,200En pedido
|
N.º de artículo de Mouser
511-STWA65N045M9
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET
|
|
1,195En existencias
1,200En pedido
|
|
|
$9.53
|
|
|
$5.62
|
|
|
$4.94
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
|
N-Channel
|
1 Channel
|
650 V
|
54 A
|
45 mOhms
|
- 30 V, 30 V
|
4.2 V
|
80 nC
|
- 55 C
|
+ 150 C
|
312 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 620 V 8.4 A TO-220 TO-22
- STF10N62K3
- STMicroelectronics
-
1:
$2.71
-
976En existencias
|
N.º de artículo de Mouser
511-STF10N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 620 V 8.4 A TO-220 TO-22
|
|
976En existencias
|
|
|
$2.71
|
|
|
$1.74
|
|
|
$1.18
|
|
|
$0.983
|
|
|
$0.851
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
620 V
|
8.4 A
|
680 mOhms
|
- 30 V, 30 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET
- STO36N60M6
- STMicroelectronics
-
1:
$6.03
-
482En existencias
|
N.º de artículo de Mouser
511-STO36N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET
|
|
482En existencias
|
|
|
$6.03
|
|
|
$4.04
|
|
|
$2.91
|
|
|
$2.88
|
|
|
$2.70
|
|
|
$2.70
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
Si
|
SMD/SMT
|
TO-LL-8
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
99 mOhms
|
- 25 V, 25 V
|
4.75 V
|
44.3 nC
|
- 55 C
|
+ 150 C
|
230 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-247 package
- STW35N60DM2
- STMicroelectronics
-
1:
$5.52
-
382En existencias
|
N.º de artículo de Mouser
511-STW35N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-247 package
|
|
382En existencias
|
|
|
$5.52
|
|
|
$3.13
|
|
|
$2.37
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
28 A
|
110 mOhms
|
- 25 V, 25 V
|
3 V
|
54 nC
|
- 55 C
|
+ 150 C
|
210 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP pa
- STF25N60M2-EP
- STMicroelectronics
-
1:
$3.36
-
841En existencias
|
N.º de artículo de Mouser
511-STF25N60M2-EP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP pa
|
|
841En existencias
|
|
|
$3.36
|
|
|
$1.83
|
|
|
$1.66
|
|
|
$1.35
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
188 mOhms
|
- 25 V, 25 V
|
2 V
|
29 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3
- STF4N62K3
- STMicroelectronics
-
1:
$2.95
-
963En existencias
|
N.º de artículo de Mouser
511-STF4N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3
|
|
963En existencias
|
|
|
$2.95
|
|
|
$1.09
|
|
|
$1.05
|
|
|
$1.02
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
620 V
|
3.8 A
|
2 Ohms
|
- 30 V, 30 V
|
3 V
|
22 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.4 Ohm typ 3.5 A MDmesh M6 Power MOSFET in an IPAK package
- STU3N65M6
- STMicroelectronics
-
1:
$1.85
-
2,440En existencias
-
NRND
|
N.º de artículo de Mouser
511-STU3N65M6
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.4 Ohm typ 3.5 A MDmesh M6 Power MOSFET in an IPAK package
|
|
2,440En existencias
|
|
|
$1.85
|
|
|
$1.18
|
|
|
$0.781
|
|
|
$0.64
|
|
|
Ver
|
|
|
$0.56
|
|
|
$0.515
|
|
|
$0.514
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
650 V
|
3.5 A
|
1.5 Ohms
|
- 25 V, 25 V
|
2.25 V
|
6 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 13 Amp Zener SuperMESH
- STB13NK60ZT4
- STMicroelectronics
-
1:
$4.73
-
710En existencias
|
N.º de artículo de Mouser
511-STB13NK60Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 13 Amp Zener SuperMESH
|
|
710En existencias
|
|
|
$4.73
|
|
|
$3.14
|
|
|
$2.23
|
|
|
$1.95
|
|
|
$1.95
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
550 mOhms
|
- 30 V, 30 V
|
3 V
|
92 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
SuperMESH
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 400V 2.7 Ohm 2A SuperMESH3
- STD3N40K3
- STMicroelectronics
-
1:
$2.19
-
1,698En existencias
-
Verificar estado con la fábrica
|
N.º de artículo de Mouser
511-STD3N40K3
Verificar estado con la fábrica
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 400V 2.7 Ohm 2A SuperMESH3
|
|
1,698En existencias
|
|
|
$2.19
|
|
|
$1.40
|
|
|
$0.969
|
|
|
$0.822
|
|
|
$0.686
|
|
|
$0.653
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
400 V
|
1.8 A
|
3.4 Ohms
|
- 30 V, 30 V
|
4.5 V
|
11 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
SuperMESH
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
- STF10NM60ND
- STMicroelectronics
-
1:
$2.63
-
946En existencias
-
NRND
|
N.º de artículo de Mouser
511-STF10NM60ND
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
|
|
946En existencias
|
|
|
$2.63
|
|
|
$1.32
|
|
|
$1.19
|
|
|
$1.10
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
8 A
|
600 mOhms
|
- 25 V, 25 V
|
3 V
|
20 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PTD HIGH VOLTAGE
- STB6N65K3
- STMicroelectronics
-
1:
$2.04
-
1,992En existencias
-
Verificar estado con la fábrica
|
N.º de artículo de Mouser
511-STB6N65K3
Verificar estado con la fábrica
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PTD HIGH VOLTAGE
|
|
1,992En existencias
|
|
|
$2.04
|
|
|
$1.31
|
|
|
$0.902
|
|
|
$0.764
|
|
|
Ver
|
|
|
$0.638
|
|
|
$0.615
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
5.4 A
|
|
|
|
|
- 55 C
|
+ 150 C
|
|
Enhancement
|
|
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 300 mOhm typ., 14 A MDmesh K5 Power MOSFET in TO-220FP ultra na
- STFU15N80K5
- STMicroelectronics
-
1:
$3.11
-
689En existencias
|
N.º de artículo de Mouser
511-STFU15N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 300 mOhm typ., 14 A MDmesh K5 Power MOSFET in TO-220FP ultra na
|
|
689En existencias
|
|
|
$3.11
|
|
|
$2.08
|
|
|
$1.98
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
14 A
|
375 mOhms
|
- 30 V, 30 V
|
4 V
|
32 nC
|
- 55 C
|
+ 150 C
|
35 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 Volt 6.4Amp Zener SuperMESH
- STP9NK65Z
- STMicroelectronics
-
1:
$3.90
-
913En existencias
|
N.º de artículo de Mouser
511-STP9NK65Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 Volt 6.4Amp Zener SuperMESH
|
|
913En existencias
|
|
|
$3.90
|
|
|
$2.55
|
|
|
$1.88
|
|
|
$1.67
|
|
|
$1.48
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
7 A
|
1.2 Ohms
|
- 30 V, 30 V
|
3 V
|
41 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a D2PAK package
- STB20N90K5
- STMicroelectronics
-
1:
$7.25
-
5,329En existencias
|
N.º de artículo de Mouser
511-STB20N90K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a D2PAK package
|
|
5,329En existencias
|
|
|
$7.25
|
|
|
$4.91
|
|
|
$3.69
|
|
|
$3.44
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
900 V
|
20 A
|
210 mOhms
|
- 30 V, 30 V
|
3 V
|
40 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) NCh 30V 0.0032Ohm 20A MOSFET
- STD17NF25
- STMicroelectronics
-
1:
$1.99
-
24,990En existencias
|
N.º de artículo de Mouser
511-STD17NF25
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) NCh 30V 0.0032Ohm 20A MOSFET
|
|
24,990En existencias
|
|
|
$1.99
|
|
|
$1.28
|
|
|
$0.86
|
|
|
$0.683
|
|
|
$0.629
|
|
|
$0.598
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
250 V
|
17 A
|
165 mOhms
|
- 20 V, 20 V
|
2 V
|
29.5 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 1200 V, 7.25 Ohm typ., 1.5 A MDmesh K5 Power MOSFET i
- STH2N120K5-2AG
- STMicroelectronics
-
1:
$5.22
-
1,944En existencias
-
2,000En pedido
|
N.º de artículo de Mouser
511-STH2N120K5-2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 1200 V, 7.25 Ohm typ., 1.5 A MDmesh K5 Power MOSFET i
|
|
1,944En existencias
2,000En pedido
|
|
|
$5.22
|
|
|
$3.48
|
|
|
$2.49
|
|
|
$2.38
|
|
|
$2.22
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
1.2 kV
|
1.5 A
|
10 Ohms
|
- 30 V, 30 V
|
4 V
|
5.3 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
AEC-Q101
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 100V 2.1mOhm 180A STripFET VI
- STH310N10F7-2
- STMicroelectronics
-
1:
$5.80
-
8,169En existencias
|
N.º de artículo de Mouser
511-STH310N10F7-2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 100V 2.1mOhm 180A STripFET VI
|
|
8,169En existencias
|
|
|
$5.80
|
|
|
$4.01
|
|
|
$2.98
|
|
|
$2.88
|
|
|
$2.33
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
100 V
|
180 A
|
2.5 mOhms
|
- 20 V, 20 V
|
3.8 V
|
180 nC
|
- 55 C
|
+ 175 C
|
315 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 40 V, 1.3 m? typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6
- STL210N4F7
- STMicroelectronics
-
1:
$2.42
-
2,643En existencias
|
N.º de artículo de Mouser
511-STL210N4F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 40 V, 1.3 m? typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6
|
|
2,643En existencias
|
|
|
$2.42
|
|
|
$1.55
|
|
|
$1.05
|
|
|
$0.876
|
|
|
$0.771
|
|
|
$0.758
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Dual N-Ch 30V 11A 0.016 Ohm STripFET V
- STL40DN3LLH5
- STMicroelectronics
-
1:
$1.71
-
40,812En existencias
|
N.º de artículo de Mouser
511-STL40DN3LLH5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Dual N-Ch 30V 11A 0.016 Ohm STripFET V
|
|
40,812En existencias
|
|
|
$1.71
|
|
|
$1.09
|
|
|
$0.728
|
|
|
$0.574
|
|
|
$0.525
|
|
|
$0.484
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
2 Channel
|
30 V
|
40 A
|
16 mOhms
|
- 22 V, 22 V
|
1.5 V
|
4.5 nC
|
- 55 C
|
+ 175 C
|
60 W
|
Enhancement
|
AEC-Q100
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|