|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSFET in a TO-220FP package
- STF7LN80K5
- STMicroelectronics
-
1:
$2.64
-
1,128En existencias
-
1,928En pedido
|
N.º de artículo de Mouser
511-STF7LN80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSFET in a TO-220FP package
|
|
1,128En existencias
1,928En pedido
|
|
|
$2.64
|
|
|
$1.30
|
|
|
$1.17
|
|
|
$0.939
|
|
|
Ver
|
|
|
$0.883
|
|
|
$0.878
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
5 A
|
1.15 Ohms
|
- 30 V, 30 V
|
3 V
|
12 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 0.95Ohm 6A MDmesh K5
- STF7N80K5
- STMicroelectronics
-
1:
$2.91
-
484En existencias
|
N.º de artículo de Mouser
511-STF7N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 0.95Ohm 6A MDmesh K5
|
|
484En existencias
|
|
|
$2.91
|
|
|
$1.89
|
|
|
$1.39
|
|
|
$1.16
|
|
|
$1.01
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
1.2 Ohms
|
- 30 V, 30 V
|
4 V
|
13.4 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.72 Ohm typ., 7 A MDmesh K5 Power MOSFET in a TO-220FP package
- STF7N90K5
- STMicroelectronics
-
1:
$3.08
-
868En existencias
-
1,000En pedido
|
N.º de artículo de Mouser
511-STF7N90K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.72 Ohm typ., 7 A MDmesh K5 Power MOSFET in a TO-220FP package
|
|
868En existencias
1,000En pedido
|
|
|
$3.08
|
|
|
$1.56
|
|
|
$1.41
|
|
|
$1.14
|
|
|
$1.06
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
900 V
|
7 A
|
720 mOhms
|
- 30 V, 30 V
|
3 V
|
17.7 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 0.76 Ohm 6AMDmesh K5
- STF8N80K5
- STMicroelectronics
-
1:
$3.24
-
820En existencias
|
N.º de artículo de Mouser
511-STF8N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 0.76 Ohm 6AMDmesh K5
|
|
820En existencias
|
|
|
$3.24
|
|
|
$1.64
|
|
|
$1.48
|
|
|
$1.20
|
|
|
$1.10
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
950 mOhms
|
- 30 V, 30 V
|
4 V
|
16.5 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 255 mOhm typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP wide c
- STFH18N60M2
- STMicroelectronics
-
1:
$3.01
-
504En existencias
|
N.º de artículo de Mouser
511-STFH18N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 255 mOhm typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP wide c
|
|
504En existencias
|
|
|
$3.01
|
|
|
$1.74
|
|
|
$1.27
|
|
|
$1.08
|
|
|
Ver
|
|
|
$0.984
|
|
|
$0.962
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
255 mOhms
|
- 25 V, 25 V
|
2 V
|
21.5 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP wide cr
- STFH24N60M2
- STMicroelectronics
-
1:
$2.18
-
814En existencias
|
N.º de artículo de Mouser
511-STFH24N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP wide cr
|
|
814En existencias
|
|
|
$2.18
|
|
|
$1.40
|
|
|
$1.27
|
|
|
$1.16
|
|
|
$1.06
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
168 mOhms
|
- 25 V, 25 V
|
2 V
|
29 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP ultra n
- STFU24N60M2
- STMicroelectronics
-
1:
$3.19
-
584En existencias
|
N.º de artículo de Mouser
511-STFU24N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP ultra n
|
|
584En existencias
|
|
|
$3.19
|
|
|
$1.60
|
|
|
$1.44
|
|
|
$1.17
|
|
|
$1.14
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
190 mOhms
|
- 25 V, 25 V
|
3 V
|
29 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-3PF packge
- STFW12N120K5
- STMicroelectronics
-
1:
$11.72
-
95En existencias
|
N.º de artículo de Mouser
511-STFW12N120K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-3PF packge
|
|
95En existencias
|
|
|
$11.72
|
|
|
$8.19
|
|
|
$6.53
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-3PF-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
12 A
|
620 mOhms
|
- 30 V, 30 V
|
3 V
|
44.2 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in TO-3PF package
- STFW38N65M5
- STMicroelectronics
-
1:
$6.35
-
87En existencias
|
N.º de artículo de Mouser
511-STFW38N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in TO-3PF package
|
|
87En existencias
|
|
|
$6.35
|
|
|
$4.87
|
|
|
$3.47
|
|
|
$3.10
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-3PF-3
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
95 mOhms
|
- 25 V, 25 V
|
4 V
|
71 nC
|
- 55 C
|
+ 150 C
|
57 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MOSFET in TO-3PF package
- STFW3N170
- STMicroelectronics
-
1:
$6.20
-
219En existencias
|
N.º de artículo de Mouser
511-STFW3N170
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MOSFET in TO-3PF package
|
|
219En existencias
|
|
|
$6.20
|
|
|
$3.59
|
|
|
$2.86
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-3PF-3
|
N-Channel
|
1 Channel
|
1.7 kV
|
2.6 A
|
7 Ohms
|
- 30 V, 30 V
|
3 V
|
44 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
|
PowerMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-3PF package
- STFW40N60M2
- STMicroelectronics
-
1:
$6.44
-
415En existencias
|
N.º de artículo de Mouser
511-STFW40N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-3PF package
|
|
415En existencias
|
|
|
$6.44
|
|
|
$3.62
|
|
|
$2.94
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-3PF-3
|
N-Channel
|
1 Channel
|
600 V
|
34 A
|
78 mOhms
|
- 25 V, 25 V
|
2 V
|
57 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1200 V, 1.65 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-3PF package
- STFW8N120K5
- STMicroelectronics
-
1:
$7.29
-
56En existencias
|
N.º de artículo de Mouser
511-STFW8N120K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1200 V, 1.65 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-3PF package
|
|
56En existencias
|
|
|
$7.29
|
|
|
$5.39
|
|
|
$3.79
|
|
|
$3.43
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-3PF-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
6 A
|
2 Ohms
|
- 30 V, 30 V
|
3 V
|
13.7 nC
|
- 55 C
|
+ 150 C
|
48 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-chanl 80 V 33 mOhm typ 90 A Pwr MOSFET
- STH140N8F7-2
- STMicroelectronics
-
1:
$3.44
-
227En existencias
|
N.º de artículo de Mouser
511-STH140N8F7-2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-chanl 80 V 33 mOhm typ 90 A Pwr MOSFET
|
|
227En existencias
|
|
|
$3.44
|
|
|
$2.25
|
|
|
$1.57
|
|
|
$1.35
|
|
|
$1.26
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
80 V
|
90 A
|
4 mOhms
|
- 20 V, 20 V
|
4.5 V
|
96 nC
|
- 55 C
|
+ 175 C
|
200 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 80 V, 0.0028 Ohm typ., 120 A STripFET F7 Power MOSFET in a H2PAK-2 pac
- STH170N8F7-2
- STMicroelectronics
-
1:
$2.70
-
61En existencias
|
N.º de artículo de Mouser
511-STH170N8F7-2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 80 V, 0.0028 Ohm typ., 120 A STripFET F7 Power MOSFET in a H2PAK-2 pac
|
|
61En existencias
|
|
|
$2.70
|
|
|
$1.85
|
|
|
$1.57
|
|
|
$1.51
|
|
|
$1.42
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
80 V
|
120 A
|
3.7 mOhms
|
- 20 V, 20 V
|
4.5 V
|
120 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 3.2 mOhm typ., 180 A, STripFET F7 Power MOSFET in an H2PAK-2 p
- STH200N10WF7-2
- STMicroelectronics
-
1:
$5.72
-
374En existencias
|
N.º de artículo de Mouser
511-STH200N10WF7-2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 3.2 mOhm typ., 180 A, STripFET F7 Power MOSFET in an H2PAK-2 p
|
|
374En existencias
|
|
|
$5.72
|
|
|
$3.83
|
|
|
$2.75
|
|
|
$2.69
|
|
|
$2.19
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
100 V
|
180 A
|
4 mOhms
|
- 20 V, 20 V
|
4.5 V
|
93 nC
|
- 55 C
|
+ 175 C
|
340 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET i
- STH275N8F7-2AG
- STMicroelectronics
-
1:
$6.12
-
87En existencias
|
N.º de artículo de Mouser
511-STH275N8F7-2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET i
|
|
87En existencias
|
|
|
$6.12
|
|
|
$4.25
|
|
|
$3.07
|
|
|
$2.86
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
80 V
|
180 A
|
1.7 mOhms
|
- 20 V, 20 V
|
2.5 V
|
193 nC
|
- 55 C
|
+ 175 C
|
315 W
|
Enhancement
|
AEC-Q101
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 40V 11mOhm 200A STripFET
- STH320N4F6-6
- STMicroelectronics
-
1:
$4.96
-
548En existencias
|
N.º de artículo de Mouser
511-STH320N4F6-6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 40V 11mOhm 200A STripFET
|
|
548En existencias
|
|
|
$4.96
|
|
|
$3.30
|
|
|
$2.35
|
|
|
$2.22
|
|
|
$2.08
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
40 V
|
200 A
|
1.3 mOhms
|
- 20 V, 20 V
|
2 V
|
240 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in
- STHU47N60DM6AG
- STMicroelectronics
-
1:
$6.16
-
54En existencias
|
N.º de artículo de Mouser
511-STHU47N60DM6AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in
|
|
54En existencias
|
|
|
$6.16
|
|
|
$4.39
|
|
|
$3.30
|
|
|
$3.19
|
|
Min.: 1
Mult.: 1
:
600
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
600 V
|
36 A
|
80 Ohms
|
- 25 V, 25 V
|
4.75 V
|
55 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 30 V 0.015 Ohm 9A STripFET V
- STL10N3LLH5
- STMicroelectronics
-
1:
$1.46
-
690En existencias
|
N.º de artículo de Mouser
511-STL10N3LLH5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 30 V 0.015 Ohm 9A STripFET V
|
|
690En existencias
|
|
|
$1.46
|
|
|
$0.913
|
|
|
$0.607
|
|
|
$0.476
|
|
|
$0.379
|
|
|
Ver
|
|
|
$0.433
|
|
|
$0.365
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-3.3x3.3-8
|
N-Channel
|
1 Channel
|
30 V
|
9 A
|
19 mOhms
|
- 22 V, 22 V
|
1 V
|
6 nC
|
- 55 C
|
+ 150 C
|
50 W
|
Enhancement
|
AEC-Q100
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 40 V, 0.85 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x
- STL260N4LF7
- STMicroelectronics
-
1:
$3.16
-
896En existencias
|
N.º de artículo de Mouser
511-STL260N4LF7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 40 V, 0.85 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x
|
|
896En existencias
|
|
|
$3.16
|
|
|
$2.06
|
|
|
$1.43
|
|
|
$1.21
|
|
|
$1.17
|
|
|
$1.13
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT5x6-8
|
N-Channel
|
1 Channel
|
40 V
|
120 A
|
1.1 mOhms
|
- 20 V, 20 V
|
2.5 V
|
42 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.6 Ohm typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3x3
- STL3N65M2
- STMicroelectronics
-
1:
$1.42
-
1,365En existencias
|
N.º de artículo de Mouser
511-STL3N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.6 Ohm typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3x3
|
|
1,365En existencias
|
|
|
$1.42
|
|
|
$0.894
|
|
|
$0.594
|
|
|
$0.464
|
|
|
$0.423
|
|
|
$0.373
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-3.3x3.3-HV-8
|
N-Channel
|
1 Channel
|
650 V
|
2.3 A
|
1.6 Ohms
|
- 25 V, 25 V
|
2 V
|
5 nC
|
- 55 C
|
+ 150 C
|
22 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Channel 30V, 48mOhms, 4A, STripFET H6 Power MOSFET
- STL4P3LLH6
- STMicroelectronics
-
1:
$0.81
-
6,430En existencias
|
N.º de artículo de Mouser
511-STL4P3LLH6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Channel 30V, 48mOhms, 4A, STripFET H6 Power MOSFET
|
|
6,430En existencias
|
|
|
$0.81
|
|
|
$0.502
|
|
|
$0.325
|
|
|
$0.248
|
|
|
$0.191
|
|
|
Ver
|
|
|
$0.224
|
|
|
$0.175
|
|
|
$0.171
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-2x2-6
|
P-Channel
|
1 Channel
|
30 V
|
4 A
|
56 mOhms
|
- 20 V, 20 V
|
1 V
|
6 nC
|
- 55 C
|
+ 150 C
|
2.4 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel 30V 15A 0.0076 Ohm STripFET
- STL56N3LLH5
- STMicroelectronics
-
1:
$1.35
-
270En existencias
|
N.º de artículo de Mouser
511-STL56N3LLH5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel 30V 15A 0.0076 Ohm STripFET
|
|
270En existencias
|
|
|
$1.35
|
|
|
$0.853
|
|
|
$0.628
|
|
|
$0.441
|
|
|
$0.401
|
|
|
$0.35
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
30 V
|
15 A
|
9 mOhms
|
- 20 V, 20 V
|
1 V
|
10 nC
|
- 55 C
|
+ 150 C
|
62.5 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 0.0048 Ohm 21A STripFET V
- STL66N3LLH5
- STMicroelectronics
-
1:
$1.99
-
168En existencias
|
N.º de artículo de Mouser
511-STL66N3LLH5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 0.0048 Ohm 21A STripFET V
|
|
168En existencias
|
|
|
$1.99
|
|
|
$1.27
|
|
|
$0.858
|
|
|
$0.681
|
|
|
$0.627
|
|
|
$0.596
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
30 V
|
21 A
|
5.8 mOhms
|
- 22 V, 22 V
|
3 V
|
12 nC
|
- 55 C
|
+ 175 C
|
4.8 W
|
Enhancement
|
AEC-Q100
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 20 V 0.025 Ohm 6 A STripFET V
- STL6N2VH5
- STMicroelectronics
-
1:
$0.78
-
3,244En existencias
|
N.º de artículo de Mouser
511-STL6N2VH5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 20 V 0.025 Ohm 6 A STripFET V
|
|
3,244En existencias
|
|
|
$0.78
|
|
|
$0.598
|
|
|
$0.394
|
|
|
$0.306
|
|
|
$0.191
|
|
|
Ver
|
|
|
$0.267
|
|
|
$0.159
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-2x2-6
|
N-Channel
|
1 Channel
|
20 V
|
6 A
|
31 mOhms
|
- 8 V, 8 V
|
700 mV
|
6 nC
|
- 55 C
|
+ 150 C
|
2.4 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|