|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.198 Ohm 15 A MDmesh V
- STP18N65M5
- STMicroelectronics
-
1:
$3.79
-
627En existencias
|
N.º de artículo de Mouser
511-STP18N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.198 Ohm 15 A MDmesh V
|
|
627En existencias
|
|
|
$3.79
|
|
|
$1.99
|
|
|
$1.80
|
|
|
$1.48
|
|
|
$1.37
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
9.4 A
|
220 mOhms
|
- 25 V, 25 V
|
3 V
|
31 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V 0.27 ohm 13A MDmesh
- STP18NM60N
- STMicroelectronics
-
1:
$3.39
-
913En existencias
|
N.º de artículo de Mouser
511-STP18NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V 0.27 ohm 13A MDmesh
|
|
913En existencias
|
|
|
$3.39
|
|
|
$1.56
|
|
|
$1.43
|
|
|
$1.24
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
260 mOhms
|
- 25 V, 25 V
|
2 V
|
35 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 30 V, 2 mOhm typ., 120 A, STripFET H6 Power MOSFET in a TO-220 package
- STP200N3LL
- STMicroelectronics
-
1:
$2.22
-
2,836En existencias
|
N.º de artículo de Mouser
511-STP200N3LL
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 30 V, 2 mOhm typ., 120 A, STripFET H6 Power MOSFET in a TO-220 package
|
|
2,836En existencias
|
|
|
$2.22
|
|
|
$1.13
|
|
|
$0.953
|
|
|
$0.825
|
|
|
Ver
|
|
|
$0.758
|
|
|
$0.702
|
|
|
$0.604
|
|
|
$0.598
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
30 V
|
120 A
|
2.15 mOhms
|
- 20 V, 20 V
|
1 V
|
53 nC
|
- 55 C
|
+ 175 C
|
176.5 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 20 Amp
- STP20NM50
- STMicroelectronics
-
1:
$6.32
-
149En existencias
|
N.º de artículo de Mouser
511-STP20NM50
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 20 Amp
|
|
149En existencias
|
|
|
$6.32
|
|
|
$3.40
|
|
|
$3.04
|
|
|
$3.03
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
20 A
|
250 mOhms
|
- 30 V, 30 V
|
3 V
|
56 nC
|
- 65 C
|
+ 150 C
|
192 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 20 Amp
- STP20NM50FD
- STMicroelectronics
-
1:
$7.99
-
354En existencias
|
N.º de artículo de Mouser
511-STP20NM50FD
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 20 Amp
|
|
354En existencias
|
|
|
$7.99
|
|
|
$4.34
|
|
|
$3.99
|
|
|
$3.92
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
20 A
|
250 mOhms
|
- 30 V, 30 V
|
3 V
|
56 nC
|
- 65 C
|
+ 150 C
|
192 W
|
Enhancement
|
|
FDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 0.162 Ohm MDmesh II 17A Switch
- STP23NM50N
- STMicroelectronics
-
1:
$5.93
-
209En existencias
|
N.º de artículo de Mouser
511-STP23NM50N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 0.162 Ohm MDmesh II 17A Switch
|
|
209En existencias
|
|
|
$5.93
|
|
|
$3.68
|
|
|
$3.26
|
|
|
$2.57
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
17 A
|
162 mOhms
|
- 25 V, 25 V
|
2 V
|
45 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220 pack
- STP25N60M2-EP
- STMicroelectronics
-
1:
$3.57
-
491En existencias
|
N.º de artículo de Mouser
511-STP25N60M2-EP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220 pack
|
|
491En existencias
|
|
|
$3.57
|
|
|
$1.85
|
|
|
$1.67
|
|
|
$1.37
|
|
|
$1.30
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
188 mOhms
|
- 25 V, 25 V
|
2 V
|
29 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 165 mOhm typ., 18 A MDmesh DM6 Power MOSFET in a TO-220 package
- STP26N60DM6
- STMicroelectronics
-
1:
$4.55
-
486En existencias
|
N.º de artículo de Mouser
511-STP26N60DM6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 165 mOhm typ., 18 A MDmesh DM6 Power MOSFET in a TO-220 package
|
|
486En existencias
|
|
|
$4.55
|
|
|
$3.01
|
|
|
$1.85
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
195 mOhms
|
- 25 V, 25 V
|
3.25 V
|
24 nC
|
- 55 C
|
+ 150 C
|
130 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80 V 2.1 mOhm 180 A STripFET VI DG
- STP270N8F7
- STMicroelectronics
-
1:
$5.95
-
394En existencias
|
N.º de artículo de Mouser
511-STP270N8F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80 V 2.1 mOhm 180 A STripFET VI DG
|
|
394En existencias
|
|
|
$5.95
|
|
|
$3.19
|
|
|
$2.88
|
|
|
$2.44
|
|
|
Ver
|
|
|
$2.26
|
|
|
$2.25
|
|
|
$2.24
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
80 V
|
180 A
|
2.5 mOhms
|
- 20 V, 20 V
|
4 V
|
193 nC
|
- 55 C
|
+ 175 C
|
315 W
|
Enhancement
|
|
STripFET
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.135Ohm typ. 22A MDmesh M2
- STP28N60M2
- STMicroelectronics
-
1:
$3.75
-
492En existencias
|
N.º de artículo de Mouser
511-STP28N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.135Ohm typ. 22A MDmesh M2
|
|
492En existencias
|
|
|
$3.75
|
|
|
$1.92
|
|
|
$1.74
|
|
|
$1.42
|
|
|
$1.36
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
24 A
|
120 mOhms
|
- 25 V, 25 V
|
3 V
|
37 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220 package
- STP28N65M2
- STMicroelectronics
-
1:
$3.64
-
484En existencias
|
N.º de artículo de Mouser
511-STP28N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220 package
|
|
484En existencias
|
|
|
$3.64
|
|
|
$1.92
|
|
|
$1.69
|
|
|
$1.44
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
20 A
|
150 mOhms
|
- 25 V, 25 V
|
2 V
|
35 nC
|
- 55 C
|
+ 150 C
|
170 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 950V 4.2Ohm typ 2A Zener-protected
- STP2N95K5
- STMicroelectronics
-
1:
$2.07
-
930En existencias
|
N.º de artículo de Mouser
511-STP2N95K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 950V 4.2Ohm typ 2A Zener-protected
|
|
930En existencias
|
|
|
$2.07
|
|
|
$1.01
|
|
|
$0.895
|
|
|
$0.717
|
|
|
Ver
|
|
|
$0.643
|
|
|
$0.603
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
950 V
|
2 A
|
4.2 Ohms
|
- 30 V, 30 V
|
4 V
|
10 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 900 Volt 2.1Amp Zener SuperMESH
- STP2NK90Z
- STMicroelectronics
-
1:
$2.68
-
805En existencias
|
N.º de artículo de Mouser
511-STP2NK90Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 900 Volt 2.1Amp Zener SuperMESH
|
|
805En existencias
|
|
|
$2.68
|
|
|
$1.32
|
|
|
$1.19
|
|
|
$1.02
|
|
|
$0.878
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
900 V
|
2.1 A
|
6.5 Ohms
|
- 30 V, 30 V
|
3 V
|
19.5 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 2.7 mOhm 180A STripFET VII
- STP310N10F7
- STMicroelectronics
-
1:
$5.09
-
344En existencias
|
N.º de artículo de Mouser
511-STP310N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 2.7 mOhm 180A STripFET VII
|
|
344En existencias
|
|
|
$5.09
|
|
|
$2.65
|
|
|
$2.42
|
|
|
$2.15
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
100 V
|
180 A
|
2.7 mOhms
|
- 20 V, 20 V
|
2.5 V
|
180 nC
|
- 55 C
|
+ 175 C
|
315 W
|
Enhancement
|
|
STripFET
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.108Ohm typ. 26A MDmesh M2
- STP33N60M2
- STMicroelectronics
-
1:
$4.78
-
645En existencias
|
N.º de artículo de Mouser
511-STP33N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.108Ohm typ. 26A MDmesh M2
|
|
645En existencias
|
|
|
$4.78
|
|
|
$2.48
|
|
|
$2.26
|
|
|
$2.19
|
|
|
$1.94
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
108 mOhms
|
- 25 V, 25 V
|
3 V
|
45.5 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in TO-220 package
- STP33N65M2
- STMicroelectronics
-
1:
$4.57
-
467En existencias
-
1,962En pedido
|
N.º de artículo de Mouser
511-STP33N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in TO-220 package
|
|
467En existencias
1,962En pedido
|
|
|
$4.57
|
|
|
$2.18
|
|
|
$2.05
|
|
|
$1.86
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
24 A
|
117 mOhms
|
- 25 V, 25 V
|
2 V
|
41.5 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 1500V 6Ohm 2.5A N-Channel
- STP3N150
- STMicroelectronics
-
1:
$5.47
-
78En existencias
|
N.º de artículo de Mouser
511-STP3N150
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 1500V 6Ohm 2.5A N-Channel
|
|
78En existencias
|
|
|
$5.47
|
|
|
$2.93
|
|
|
$2.67
|
|
|
$2.42
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
1.5 kV
|
2.5 A
|
9 Ohms
|
- 30 V, 30 V
|
5 V
|
29.3 nC
|
- 50 C
|
+ 150 C
|
140 W
|
Enhancement
|
|
PowerMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 2.4 A Zener SuperMESH
- STP3NK60Z
- STMicroelectronics
-
1:
$2.21
-
90En existencias
|
N.º de artículo de Mouser
511-STP3NK60Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 2.4 A Zener SuperMESH
|
|
90En existencias
|
|
|
$2.21
|
|
|
$1.08
|
|
|
$0.963
|
|
|
$0.768
|
|
|
Ver
|
|
|
$0.699
|
|
|
$0.69
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
2.4 A
|
3.6 Ohms
|
- 30 V, 30 V
|
3 V
|
11.8 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 600V-3.3ohms Zener SuperMESH 2.4A
- STP3NK60ZFP
- STMicroelectronics
-
1:
$2.50
-
648En existencias
|
N.º de artículo de Mouser
511-STP3NK60ZFP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 600V-3.3ohms Zener SuperMESH 2.4A
|
|
648En existencias
|
|
|
$2.50
|
|
|
$1.23
|
|
|
$1.11
|
|
|
$0.885
|
|
|
$0.802
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
600 V
|
2.4 A
|
3.6 Ohms
|
- 25 V, 25 V
|
3 V
|
11.8 nC
|
- 55 C
|
+ 150 C
|
20 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 900 Volt 3 Amp Zener SuperMESH
- STP3NK90Z
- STMicroelectronics
-
1:
$2.82
-
690En existencias
|
N.º de artículo de Mouser
511-STP3NK90Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 900 Volt 3 Amp Zener SuperMESH
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690En existencias
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$2.82
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$1.40
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$1.26
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$1.14
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-220-3
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N-Channel
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1 Channel
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900 V
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3 A
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4.8 Ohms
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- 30 V, 30 V
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3 V
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22.7 nC
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- 55 C
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+ 150 C
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90 W
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Enhancement
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SuperMESH
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 4.1 Ohm typ., 3 A SuperMESH Power MOSFET in TO-220FP package
- STP3NK90ZFP
- STMicroelectronics
-
1:
$1.96
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1,164En existencias
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N.º de artículo de Mouser
511-STP3NK90ZFP
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STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 4.1 Ohm typ., 3 A SuperMESH Power MOSFET in TO-220FP package
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1,164En existencias
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$1.96
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$0.948
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$0.848
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$0.725
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Ver
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$0.63
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$0.576
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Min.: 1
Mult.: 1
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Si
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Through Hole
|
TO-220-3
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N-Channel
|
1 Channel
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900 V
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3 A
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4.8 Ohms
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- 30 V, 30 V
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3 V
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22.7 nC
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- 55 C
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+ 150 C
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25 W
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Enhancement
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SuperMESH
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220 package
- STP43N60DM2
- STMicroelectronics
-
1:
$5.95
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10En existencias
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N.º de artículo de Mouser
511-STP43N60DM2
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STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220 package
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10En existencias
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$5.95
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$3.16
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$2.89
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$2.61
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-220-3
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N-Channel
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1 Channel
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650 V
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34 A
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93 mOhms
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- 25 V, 25 V
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3 V
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56 nC
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- 55 C
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+ 150 C
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250 W
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Enhancement
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MDmesh
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PowerMESH MOSFET
- STP4N150
- STMicroelectronics
-
1:
$5.60
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456En existencias
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N.º de artículo de Mouser
511-STP4N150
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STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PowerMESH MOSFET
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456En existencias
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$5.60
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$2.95
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$2.71
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$2.59
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-220-3
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N-Channel
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1 Channel
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1.5 kV
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4 A
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5 Ohms
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- 30 V, 30 V
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3 V
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50 nC
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- 55 C
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+ 150 C
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160 W
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Enhancement
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PowerMESH
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 525V 2.5A 2.1 Ohm SuperMESH3
- STP4N52K3
- STMicroelectronics
-
1:
$1.52
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715En existencias
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N.º de artículo de Mouser
511-STP4N52K3
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STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 525V 2.5A 2.1 Ohm SuperMESH3
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715En existencias
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$1.52
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$0.956
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$0.793
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$0.628
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Ver
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$0.57
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$0.524
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$0.439
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$0.435
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$0.434
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Min.: 1
Mult.: 1
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Si
|
Through Hole
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TO-220-3
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N-Channel
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1 Channel
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525 V
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2.5 A
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2.1 Ohms
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- 30 V, 30 V
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3.75 V
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11 nC
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20 W
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MDmesh
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Tube
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 800V 2.1Ohm 3A Zener-protected
- STP4N80K5
- STMicroelectronics
-
1:
$2.21
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898En existencias
|
N.º de artículo de Mouser
511-STP4N80K5
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STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 800V 2.1Ohm 3A Zener-protected
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898En existencias
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$2.21
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$1.08
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$0.961
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$0.867
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Ver
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$0.704
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$0.689
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Min.: 1
Mult.: 1
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Si
|
Through Hole
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TO-220-3
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N-Channel
|
1 Channel
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800 V
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3 A
|
2.1 Ohms
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- 30 V, 30 V
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4 V
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10.5 nC
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- 55 C
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+ 150 C
|
60 W
|
Enhancement
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MDmesh
|
Tube
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