Volver a Diodes Incorporated

Diodes Incorporated DMTH15H017LPSWQ N-Channel Enhancement Mode MOSFET

Diodes Incorporated DMTH15H017LPSWQ N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and maintain impressive switching performance. This MOSFET features high conversion efficiency and a 100% Unclamped Inductive Switching (UIS) test in production, ensuring a reliable and robust end application. The DMTH15H017LPSWQ MOSFET offers a fast switching speed and low input capacitance. This MOSFET is Lead-free, RoHS-compliant, and Production Part Approval Process (PPAP) capable. Typical applications include synchronous rectification, power switching, and Class D audio amplifiers.

Features

  • Rated to 175°C:
    • Ideal for high ambient temperature environments
  • High conversion efficiency
  • AEC-Q101 qualified
  • PPAP capable
  • Low RDS(ON):
    • Minimizes ON-state losses
  • 100% Unclamped Inductive Switching (UIS) test in production:
    • Ensures more reliable and robust end application
  • <1.1mm package profile:
    • Ideal for thin applications
  • Low input capacitance
  • Fast switching speed
  • Lead-free finish
  • RoHS compliant
  • Halogen and Antimony free

Specifications

  • 150VDSS drain source voltage
  • ±20VGSS gate-source voltage
  • 200A pulsed drain current
  • 50A maximum continuous body diode forward current
  • -55°C to 175°C operating temperature range
  • Package:
    • PowerDI5060-8
  • UL Flammability Classification Rating 94V-0
  • Weight:
    • 0.097 grams

Applications

  • Synchronous rectification
  • Power switching
  • Class D audio amplifiers

Dimensions

Mechanical Drawing - Diodes Incorporated DMTH15H017LPSWQ N-Channel Enhancement Mode MOSFET
Publicado: 2022-12-27 | Actualizado: 2023-01-18