IXYS IXYx110N120A4 1200V XPT™ GenX4™ Trench IGBTs
IXYS IXYx110N120A4 1200V XPT™ GenX4™ Trench IGBTs are high-gain IGBTs optimized for ultra-low conduction losses VCE(sat) and for switching frequencies of up to 5kHz. Thin wafer technology and improved processes enable a low gate charge QG, hence, low gate-current requirement. High gain boosts surge current capability, and the positive thermal co-efficient of VCE(sat) simplifies paralleling. The low thermal resistance of Rth(j-c) eases thermal-related design issues.
The IXYS IXYx110N120A4 1200V IGBTs are available in TO-264, PLUS247, and SOT-227B (miniBLOC) packages. The IXYx110N120A4 is ideal for applications such as inrush current protection circuits, lamp ballasts, solar inverters, and many more.
Features
- Optimized for low conduction losses VCE(sat)
- High-gain and surge current capability
- Low thermal resistance Rth(j-c)
- Positive thermal coefficient of VCE(sat)
- International standard packages
Applications
- Solar inverters
- UPS
- Motor drives
- Welding machines
- Lamp ballasts
- Inrush current protection circuits
Related IGBTs
IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs
Uses a proprietary XPT thin-wafer technology and a 4th generation (GenX4) trench IGBT process.
Publicado: 2020-12-31
| Actualizado: 2024-05-30