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Qorvo TGA2830 & TGA2975 GaN Power Amplifiers

Qorvo TGA2830 & TGA2975 GaN Power Amplifiers operate from 2.7GHz to 3.5GHz and are designed using Qorvo's 00.25µm GaN (Gallium Nitride) on SiC (Silicon Carbide) production process (QGaN25). The TGA2830 and TGA2975 can operate under both pulse and CW conditions and are ideally suited for commercial and defense related radar applications. Both RF ports on these devices have integrated DC blocking capacitors and are matched to 50Ω. 

The Qorvo TGA2830 and TGA2975 GaN Power Amplifiers are available in a 5mm x 5mm overmold Quad Flat No-Lead (QFN) package.

Features

  • 2.7GHz to 3.5GHz frequency range
  • Output power at saturation (PSAT) PIN = 18dBm 
    • 2830: >42.5dBm
    • 2975: >41.0dBm
  • Power Added Efficiency (PAE) PIN = 18dBm
    • 2830: >54%
    • 2975: >54%
  • Small signal gain
    • 2830: >30.5dB
    • 2975: >31.0dB
  • Return loss
    • 2830: >11.0dB
    • 2975: >9.0dB
  • Bias
    • 2830: VD = 20V to 32V, IDQ = 225mA
    • 2975: VD = 28V, IDQ = 175mA
  • Pulsed VD: PW = 100us, DC = 10%
  • 5.0mm x 5.0mm x 1.45mm QFN24 package

Applications

  • Commercial and military radar

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Block Diagram

Block Diagram - Qorvo TGA2830 & TGA2975 GaN Power Amplifiers

Package Outline

Mechanical Drawing - Qorvo TGA2830 & TGA2975 GaN Power Amplifiers
View Results ( 4 ) Page
N.º de artículo Hoja de datos Ganancia Corriente de suministro operativa
TGA2975-SM TGA2975-SM Hoja de datos 31 dB 175 mA
TGA2830-SM TGA2830-SM Hoja de datos 30.5 dB 225 mA
TGA2830-SMTR7 TGA2830-SMTR7 Hoja de datos 30.5 dB
TGA2975-SMTR7 TGA2975-SMTR7 Hoja de datos
Publicado: 2015-09-28 | Actualizado: 2022-03-11