ROHM Semiconductor RFx30TZ6S & RFx60TZ6S Ultra Fast Recovery Diodes

ROHM Semiconductor RFx30TZ6S and RFx60TZ6S Ultra Fast Recovery Diodes are silicon epitaxial planar diodes offering a peak reverse voltage of 650V and a rectified forward current range from 30A to 60A. These devices feature fast recovery, ultra-low switching loss, and a high current overload capacity.

The ROHM Semiconductor RFx30TZ6S and RFx60TZ6S Ultra Fast Recovery Diodes are offered in an industry-standard TO-247-2L package with a 175℃ maximum junction temperature.

Features

  • Silicon epitaxial planar structure
  • 650V reverse voltage
  • 30A to 60A rectified forward current range
  • Ultra-fast recovery
  • Ultra-soft recovery type
  • Ultra-low switching loss
  • High current overload capacity
  • TO-247-2L package

Applications

  • General rectification
  • PFC power supplies

Noise Performance Comparison Waveforms

ROHM Semiconductor RFx30TZ6S & RFx60TZ6S Ultra Fast Recovery Diodes

VF & trr Characteristics Comparison Map

ROHM Semiconductor RFx30TZ6S & RFx60TZ6S Ultra Fast Recovery Diodes

Pin Designations

Mechanical Drawing - ROHM Semiconductor RFx30TZ6S & RFx60TZ6S Ultra Fast Recovery Diodes

Package Outline

Mechanical Drawing - ROHM Semiconductor RFx30TZ6S & RFx60TZ6S Ultra Fast Recovery Diodes
Publicado: 2022-03-14 | Actualizado: 2022-07-12