Toshiba MG250YD2YMS3 2200V Dual SiC MOSFET Module

Toshiba MG250YD2YMS3 2200V Dual SiC MOSFET Module is suitable for applications that use DC1500V, such as renewable energy power generation and energy storage systems. The MG250YD2YMS3 features low conduction loss with a low drain-source on-voltage of 0.7V and offers lower turn-on and turn-off switching loss of 14mJ and 11mJ, respectively. This MOSFET boasts an approximately 90% reduction against a typical 2300V silicon (Si) insulated-gate bipolar transistor (IGBT) module. These characteristics contribute to high equipment efficiency, and realizing low switching loss also allows a two-level circuit with a lower module count to replace the conventional three-level circuit, contributing to equipment miniaturization. Toshiba MG250YD2YMS3 2200V Dual SiC MOSFET is suitable for industrial equipment, including motor control equipment and high-frequency DC-DC converters.