|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 7 PowerTransistor, 80 V
- ISC034N08NM7ATMA1
- Infineon Technologies
-
1:
$2.55
-
5,188En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-ISC034N08NM7ATMA
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 7 PowerTransistor, 80 V
|
|
5,188En existencias
|
|
|
$2.55
|
|
|
$1.63
|
|
|
$1.11
|
|
|
$0.925
|
|
|
$0.857
|
|
|
$0.801
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
PG-TDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
122 A
|
3.4 mOhms
|
20 V
|
3.2 V
|
34 nC
|
- 55 C
|
+ 175 C
|
115 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SILICON CARBIDE MOSFET
- IMLT40R011M2HXTMA1
- Infineon Technologies
-
1:
$16.91
-
1,184En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-IMLT40R011M2HXTM
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SILICON CARBIDE MOSFET
|
|
1,184En existencias
|
|
|
$16.91
|
|
|
$11.91
|
|
|
$9.72
|
|
|
$9.42
|
|
|
$8.97
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
SiC
|
SMD/SMT
|
HDSOP-16
|
N-Channel
|
1 Channel
|
400 V
|
144 A
|
14.4 mOhms
|
- 7 V, 23 V
|
4.5 V
|
85 nC
|
- 55 C
|
+ 175 C
|
429 W
|
Enhancement
|
|
CoolSiC
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 600 V CoolMOS 8 Power Transistor
- IPLT60R070CM8XTMA1
- Infineon Technologies
-
1:
$5.49
-
700En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-IPLT60R070CM8XTM
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 600 V CoolMOS 8 Power Transistor
|
|
700En existencias
|
|
|
$5.49
|
|
|
$3.58
|
|
|
$2.80
|
|
|
$2.35
|
|
|
$2.18
|
|
|
$2.03
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
Si
|
SMD/SMT
|
PG-HDSOP-16
|
N-Channel
|
1 Channel
|
650 V
|
40 A
|
70 mOhms
|
20 V
|
4.7 V
|
43 nC
|
- 55 C
|
+ 150 C
|
245 W
|
Enhancement
|
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 6 Power Transistor, 60 V
- ISC060N06NM6ATMA1
- Infineon Technologies
-
1:
$0.80
-
3,500En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-ISC060N06NM6ATMA
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 6 Power Transistor, 60 V
|
|
3,500En existencias
|
|
|
$0.80
|
|
|
$0.514
|
|
|
$0.421
|
|
|
$0.403
|
|
|
$0.361
|
|
|
Ver
|
|
|
$0.388
|
|
|
$0.377
|
|
|
$0.339
|
|
|
$0.329
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
PG-TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
62 A
|
6 mOhms
|
20 V
|
3.3 V
|
12.4 nC
|
- 55 C
|
+ 175 C
|
50 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 600 V CoolMOS 8 Power Transistor
- IPLT60R099CM8XTMA1
- Infineon Technologies
-
1:
$4.13
-
700En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-IPLT60R099CM8XTM
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 600 V CoolMOS 8 Power Transistor
|
|
700En existencias
|
|
|
$4.13
|
|
|
$2.69
|
|
|
$2.10
|
|
|
$1.76
|
|
|
Ver
|
|
|
$1.53
|
|
|
$1.63
|
|
|
$1.53
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
Si
|
SMD/SMT
|
PG-HDSOP-16
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
99 mOhms
|
20 V
|
4.7 V
|
31 nC
|
- 55 C
|
+ 150 C
|
186 W
|
Enhancement
|
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 7 PowerTransistor, 100 V
- ISC040N10NM7ATMA1
- Infineon Technologies
-
1:
$3.09
-
562En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-ISC040N10NM7ATMA
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 7 PowerTransistor, 100 V
|
|
562En existencias
|
|
|
$3.09
|
|
|
$1.99
|
|
|
$1.42
|
|
|
$1.19
|
|
|
Ver
|
|
|
$1.04
|
|
|
$1.10
|
|
|
$1.04
|
|
|
$1.04
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
PG-TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
130 A
|
4 mOhms
|
20 V
|
3.2 V
|
39 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 7 power MOSFET for automotive applications
- IAUCN04S7N010GATMA1
- Infineon Technologies
-
1:
$2.10
-
550En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-IAUCN04S7N010GAT
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 7 power MOSFET for automotive applications
|
|
550En existencias
|
|
|
$2.10
|
|
|
$1.35
|
|
|
$0.93
|
|
|
$0.788
|
|
|
$0.67
|
|
|
$0.626
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
PG-THSOG-4-1
|
N-Channel
|
1 Channel
|
40 V
|
252 A
|
1.04 mOhms
|
20 V
|
3 V
|
59 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 600 V CoolMOS 8 Power Transistor
- IPLT60R055CM8XTMA1
- Infineon Technologies
-
1:
$6.45
-
350En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-IPLT60R055CM8XTM
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 600 V CoolMOS 8 Power Transistor
|
|
350En existencias
|
|
|
$6.45
|
|
|
$4.22
|
|
|
$3.11
|
|
|
$2.76
|
|
|
$2.44
|
|
|
$2.44
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
Si
|
SMD/SMT
|
PG-HDSOP-16
|
N-Channel
|
1 Channel
|
650 V
|
48 A
|
55 mOhms
|
20 V
|
4.7 V
|
51 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 8 Power MOSFET, 80 V
- ISC016N08NM8ATMA1
- Infineon Technologies
-
1:
$4.64
-
259En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-ISC016N08NM8ATMA
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 8 Power MOSFET, 80 V
|
|
259En existencias
|
|
|
$4.64
|
|
|
$3.03
|
|
|
$2.37
|
|
|
$1.98
|
|
|
Ver
|
|
|
$1.72
|
|
|
$1.84
|
|
|
$1.72
|
|
|
$1.72
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
PG-TDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
268 A
|
1.54 mOhms
|
20 V
|
3.5 V
|
76 nC
|
- 55 C
|
+ 175 C
|
263 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 6 n-channel power MOSFET 80 V
- IQE036N08NM6SCATMA1
- Infineon Technologies
-
1:
$4.05
-
720En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-IQE036N08NM6SCAT
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS 6 n-channel power MOSFET 80 V
|
|
720En existencias
|
|
|
$4.05
|
|
|
$2.65
|
|
|
$1.86
|
|
|
$1.56
|
|
|
Ver
|
|
|
$1.35
|
|
|
$1.41
|
|
|
$1.40
|
|
|
$1.35
|
|
Min.: 1
Mult.: 1
:
6,000
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
- IPTC039N15NM5ATMA1
- Infineon Technologies
-
1:
$6.78
-
5,739En existencias
|
N.º de artículo de Mouser
726-TC039N15NM5ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
|
|
5,739En existencias
|
|
|
$6.78
|
|
|
$4.57
|
|
|
$3.38
|
|
|
$3.37
|
|
|
$3.19
|
|
|
$3.15
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
Si
|
SMD/SMT
|
HDSOP-16
|
N-Channel
|
1 Channel
|
150 V
|
190 A
|
3.9 mOhms
|
- 20 V, 20 V
|
3 V
|
74 nC
|
- 55 C
|
+ 175 C
|
319 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 250 A, 40 V, Automotive Power MOSFET with OptiMOS-7 Technology
- IAUMN04S7N005GAUMA1
- Infineon Technologies
-
1:
$4.64
-
2,288En existencias
-
200En pedido
-
Nuevo producto
|
N.º de artículo de Mouser
726-IAUMN04S7N005GAU
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 250 A, 40 V, Automotive Power MOSFET with OptiMOS-7 Technology
|
|
2,288En existencias
200En pedido
|
|
|
$4.64
|
|
|
$3.07
|
|
|
$2.40
|
|
|
$2.14
|
|
|
$1.89
|
|
|
$1.89
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IAUCN04S7N040DATMA1
- Infineon Technologies
-
1:
$2.16
-
7,404En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-IAUCN04S7N040DAT
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
7,404En existencias
|
|
|
$2.16
|
|
|
$1.38
|
|
|
$0.924
|
|
|
$0.733
|
|
|
Ver
|
|
|
$0.567
|
|
|
$0.624
|
|
|
$0.619
|
|
|
$0.567
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
- IPD50N06S2L13ATMA2
- Infineon Technologies
-
1:
$2.19
-
29,782En existencias
|
N.º de artículo de Mouser
726-IPD50N06S2L13ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
|
|
29,782En existencias
|
|
|
$2.19
|
|
|
$1.39
|
|
|
$0.972
|
|
|
$0.776
|
|
|
$0.735
|
|
|
$0.699
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
55 V
|
50 A
|
12.7 mOhms
|
- 20 V, 20 V
|
1.6 V
|
69 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
- IPT022N10NF2SATMA1
- Infineon Technologies
-
1:
$3.46
-
1,693En existencias
-
1,800En pedido
|
N.º de artículo de Mouser
726-IPT022N10NF2SATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
|
|
1,693En existencias
1,800En pedido
|
|
|
$3.46
|
|
|
$2.26
|
|
|
$1.58
|
|
|
$1.37
|
|
|
$1.28
|
|
|
$1.28
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
100 V
|
236 A
|
2.25 mOhms
|
- 20 V, 20 V
|
2.2 V
|
103 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET > 60-80V
- IPD380P06NMATMA1
- Infineon Technologies
-
1:
$2.44
-
32,304En existencias
|
N.º de artículo de Mouser
726-IPD380P06NMATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET > 60-80V
|
|
32,304En existencias
|
|
|
$2.44
|
|
|
$1.39
|
|
|
$1.12
|
|
|
$0.861
|
|
|
$0.804
|
|
|
$0.791
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
60 V
|
35 A
|
38 mOhms
|
- 20 V, 20 V
|
2.1 V
|
63 nC
|
- 55 C
|
+ 175 C
|
125 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 150 A, 40 V, Automotive Power MOSFET with OptiMOS-7 Technology
- IAUMN04S7N011GAUMA1
- Infineon Technologies
-
1:
$3.23
-
130En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-IAUMN04S7N011GAU
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 150 A, 40 V, Automotive Power MOSFET with OptiMOS-7 Technology
|
|
130En existencias
|
|
|
$3.23
|
|
|
$2.10
|
|
|
$1.54
|
|
|
$1.29
|
|
|
$1.20
|
|
|
$1.12
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 95A TDSON-8
- BSC052N08NS5ATMA1
- Infineon Technologies
-
1:
$2.44
-
16,913En existencias
|
N.º de artículo de Mouser
726-BSC052N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 95A TDSON-8
|
|
16,913En existencias
|
|
|
$2.44
|
|
|
$1.54
|
|
|
$1.23
|
|
|
$1.01
|
|
|
Ver
|
|
|
$0.933
|
|
|
$1.00
|
|
|
$0.965
|
|
|
$0.933
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
95 A
|
7.6 mOhms
|
- 20 V, 20 V
|
2.2 V
|
32 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
- IPT026N10N5ATMA1
- Infineon Technologies
-
1:
$4.26
-
28,963En existencias
|
N.º de artículo de Mouser
726-IPT026N10N5ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
|
|
28,963En existencias
|
|
|
$4.26
|
|
|
$2.81
|
|
|
$1.99
|
|
|
$1.81
|
|
|
$1.69
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
100 V
|
202 A
|
2.6 mOhms
|
- 20 V, 20 V
|
3.8 V
|
96 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT 55V 98A 8mOhm 113.3nCAC
- IRFP064NPBF
- Infineon Technologies
-
1:
$3.27
-
14,278En existencias
|
N.º de artículo de Mouser
942-IRFP064NPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT 55V 98A 8mOhm 113.3nCAC
|
|
14,278En existencias
|
|
|
$3.27
|
|
|
$1.83
|
|
|
$1.49
|
|
|
$1.23
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
55 V
|
110 A
|
8 mOhms
|
- 20 V, 20 V
|
1.8 V
|
170 nC
|
- 55 C
|
+ 175 C
|
200 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CHANNEL 100+
- IPB120N10S405ATMA1
- Infineon Technologies
-
1:
$3.93
-
14,550En existencias
|
N.º de artículo de Mouser
726-IPB120N10S405ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CHANNEL 100+
|
|
14,550En existencias
|
|
|
$3.93
|
|
|
$2.58
|
|
|
$1.81
|
|
|
$1.62
|
|
|
$1.52
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
100 V
|
120 A
|
5 mOhms
|
- 20 V, 20 V
|
2.7 V
|
91 nC
|
- 55 C
|
+ 175 C
|
190 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET > 60-80V
- IPD053N08N3GATMA1
- Infineon Technologies
-
1:
$2.21
-
50,331En existencias
|
N.º de artículo de Mouser
726-IPD053N08N3GA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET > 60-80V
|
|
50,331En existencias
|
|
|
$2.21
|
|
|
$1.60
|
|
|
$1.26
|
|
|
$1.13
|
|
|
$1.13
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
80 V
|
90 A
|
5.3 mOhms
|
- 20 V, 20 V
|
2 V
|
52 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 75V 30A DPAK-2 OptiMOS
- IPD30N08S2L21ATMA1
- Infineon Technologies
-
1:
$2.43
-
36,717En existencias
|
N.º de artículo de Mouser
726-IPD30N08S2L21ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 75V 30A DPAK-2 OptiMOS
|
|
36,717En existencias
|
|
|
$2.43
|
|
|
$1.57
|
|
|
$1.07
|
|
|
$0.856
|
|
|
$0.841
|
|
|
$0.786
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
75 V
|
30 A
|
15.9 mOhms
|
- 20 V, 20 V
|
1.2 V
|
72 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -60V -18.6A DPAK-2
- SPD18P06PGBTMA1
- Infineon Technologies
-
1:
$1.68
-
52,448En existencias
|
N.º de artículo de Mouser
726-SPD18P06PGBTMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -60V -18.6A DPAK-2
|
|
52,448En existencias
|
|
|
$1.68
|
|
|
$1.07
|
|
|
$0.713
|
|
|
$0.562
|
|
|
$0.514
|
|
|
$0.473
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
60 V
|
18.6 A
|
100 mOhms
|
- 20 V, 20 V
|
4 V
|
33 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 200 A, 40 V, Automotive Power MOSFET with OptiMOS-7 Technology
- IAUMN04S7N006GAUMA1
- Infineon Technologies
-
1:
$3.30
-
170En existencias
-
200En pedido
-
Nuevo producto
|
N.º de artículo de Mouser
726-IAUMN04S7N006GAU
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 200 A, 40 V, Automotive Power MOSFET with OptiMOS-7 Technology
|
|
170En existencias
200En pedido
|
|
|
$3.30
|
|
|
$2.26
|
|
|
$1.92
|
|
|
$1.54
|
|
|
$1.51
|
|
|
$1.51
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
OptiMOS
|
Reel, Cut Tape
|
|